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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Stringfellow, Gerald B.; Sadwick, Laurence P. | Chemical beam epitaxial growth of InP and GaP by using tertiarybutylbis (dimethylamino) phosphine | We report the growth of indium phosphide (InP) by using a chemical beam epitaxy (CBE) technique with the group V source tertiarybutylbis (dimethylamino) phosphine (TBBDMAP). The photoluminescence spectra at 15 K showed that the intensity of a peak attributed to impurity recombination and the FWHM i... | Chemical beam epitaxy; CBE; InP; GaP; Tertiarybutylbis (Dimethylamino) Phosphine; Gallium phosphide; TBBDMAP | 2007 |
| 2 |
 | Stringfellow, Gerald B.; Sadwick, Laurence P. | Low pressure pyrolysis of alternate phosphorus precursors for chemical beam epitaxial growth of InP and related compounds | The most widely used phosphorous source in chemical beam epitaxy (CBE) is phosphine (PH3). However, because it is highly toxic, alternatives to phosphine have been sought for the growth of phosphorous-containing compounds. We have investigated the pyrolysis rates and reaction products, in low pres... | Chemical Beam Epitaxy; CBE | 1994 |
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