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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Tiwari, Ashutosh | Epitaxial growth of TaN films on Si(100) and Si(111) using a TiN buffer layer | We have deposited high-quality epitaxial B1 NaCl-structured TaN films on Si(100) and Si(111) substrates with TiN as the buffer layer, using pulsed laser deposition. Our method exploits the concept of lattice-matching epitaxy between TiN and TaN and domain-matching epitaxy between TiN and silicon. X... | Diffusion barriers; Buffer layers; Tantalum nitride; Silicon substrate | 2002 |
| 2 |
 | Tiwari, Ashutosh | Epitaxial growth of ZnO films on Si(111) | In this paper, we report the growth of ZnO films on silicon substrates using a pulsed laser deposition technique. These films were deposited on Si(111) directly as well as by using thin buffer layers of AlN and GaN. All the films were found to have c-axis-preferred orientation aligned with normal to... | Buffer layers; Aluminum nitride; Silicon substrate; Biaxial strain | 2002 |
| 3 |
 | Tiwari, Ashutosh | Growth of epitaxial ZnO films on Si(111) | Epitaxial ZnO films have been grown on Si(l 11) substrates by employing a A1N buffer layer during a pulsed laser-deposition process. The epitaxial structure of A1N on Si(l 11) substrate provides a template for ZnO growth. The resultant films are evaluated by transmission electron microscopy, x-ray ... | Buffer layers; Aluminum nitride; Silicon substrate | 2002 |
| 4 |
 | Tiwari, Ashutosh | Stress-induced tuning of metal-insulator transition in NdNiO3 films | We have used the lattice-mismatch epitaxial strain, induced by the constraint of epitaxy, to tune the metal-insulator (M- I) transition temperature of NdNiO3 films grown on Si(100) substrate. Films were integrated with the Si(100) substrate using several combinations of thin buffer layers. A system... | NdNiO3; Silicon substrate; Tantalum nitride; Buffer layers; Biaxial strain | 2002 |
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