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| Creator | Title | Description | Subject | Date | ||
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 | Stringfellow, Gerald B. | Surface photo-absorption studies of the chemical structure of GaInP grown by organometallic vapor phase epitaxy | The surface structure of Ga0.52In0.48P was studied by surface photoabsorption. An absorption peak due to P dimers on Ga0.52In0.48P was observed at 400 nm, shorter than for InP (430 nm). From comparison with results for GaAs and InP, the data are interpreted to indicate that at a tertiarybutylphos... | Absorption peak; Ordering; Substrate orientation | 1995 |
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