Filters: Format: "application/pdf" School Or College: "College of Engineering" Collection: "ir_uspace" Subject: "Epitaxy"
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| Creator | Title | Description | Subject | Date | ||
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Tiwari, Ashutosh | Epitaxial growth and properties of MoOx(2 | We report the growth of epitaxial molybdenum oxide (MoOx,2<x<2.75) films on c plane of sapphire substrate using pulsed laser deposition in oxygen environment. The structure was characterized using x-ray diffraction, high resolution transmission electron microscopy and x-ray photoelectron spectroscop... | Epitaxy; MoO | 2005 |
| 2 |
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Stringfellow, Gerald B. | InAsSbBi alloys grown by organometallic vapor-phase epitaxy | Provides information on a study on the growth of InAsSbBi alloys by organometallic vapor-phase epitaxy. Experiment; Results and discussion; Conclusion. | Alloys; Epitaxy; Organometallic Compounds | 1994 |
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Stringfellow, Gerald B. | Kinetics of Te doping in disordering GaInP grown by organometallic vapor phase epitaxy | Te-doped GaInP epitaxial layers were grown by organometallic vapor phase epitaxy in an effort to clarify the Te disordering mechanism. CuPt ordered GaInP is produced under normal growth conditions. The addition of Te has been reported to induce disorder. One suggested mechanism for disordering GaInP... | Crystal growth; Epitaxy; Dynamics | 2001 |
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Stringfellow, Gerald B. | Sb enhancement of lateral superlattice formation in GaInP | Epitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v)=0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by ... | Tin; Epitaxy; Photoluminescence | 2001 |
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