UScholar Works
 
Filters: Format Medium: "application/pdf" Collection: "ir_uspace" Subject: "Ferromagnetic semiconductors"
1 - 25 of 9
Number of results to display per page
CreatorTitleDescriptionSubjectDate
1 Scarpulla, MichaelCarrier concentration dependencies of magnetization & transport in Ga1-xMnxAs1-yTeyWe have investigated the transport and magnetization characteristics of Ga1-xMnxAs intentionally compensated with shallow Te donors. Using ion implantation followed by pulsed-laser melting, we vary the Te compensation and drive the system through a metal-insulator transition (MIT). This MIT is assoc...Gallium arsenide; Ferromagnetic semiconductors; Magnetization; Resistivity2005
2 Scarpulla, MichaelCompensation-dependent in-plane magnetization reversal processes in Ga1-xMnxP1-ySyWe report the effect of dilute alloying of the anion sublattice with S on the in-plane uniaxial magnetic anisotropy and magnetization reversal process in Ga1−xMnxP as measured by both ferromagnetic resonance (FMR) spectroscopy and superconducting quantum interference device (SQUID) magnetometry. ...Ferromagnetic semiconductors; Nonmagnetic compensation2008-12
3 Scarpulla, MichaelCompositional tuning of ferromagnetism in Ga1-xMnxPWe report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018 to 0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-me...Gallium arsenide; Ferromagnetic semiconductors2006-12
4 Scarpulla, MichaelFerromagnetic Ga1-xMnxAs produced by ion implantation and pulsed-laser meltingWe demonstrate the formation of ferromagnetic Ga1-xMnxAs films by Mn ion implantation into GaAs followed by pulsed-laser melting. Irradiation with a single excimer laser pulse results in the epitaxial regrowth of the implanted layer with Mn substitutional fraction up to 80% and effective Curie tempe...Gallium arsenide; Ferromagnetic semiconductors; Remanent magnetization2003
5 Scarpulla, MichaelMagnetic cluster phases of Mn-interstitial-free (Ga,Mn)AsWe report an investigation of magnetic cluster phases of (Ga,Mn)As of varying dosages formed by Mn ion implantation followed by pulsed-laser melting (II-PLM). A systematic study of zero-field-cooled and field-cooled magnetization along several high-symmetry crystallographic directions reveals the ...Magnetic cluster phases; Gallium Arsenide; Ferromagnetic semiconductors; Interstitials2007
6 Scarpulla, MichaelMn L3,2 x-ray absorption and magnetic circular dichroism in ferromagnetic Ga1-xMnxPWe have measured the x-ray absorption and x-ray magnetic circular dichroism (XMCD) at the Mn L3,2 edges in ferromagnetic Ga1−xMnxP films for 0.018≤x≤0.042. Large XMCD asymmetries at the L3 edge indicate significant spin polarization of the density of states at the Fermi energy. The temperatur...X-ray absorption; Gallium Arsenide; Ferromagnetic semiconductors2006
7 Scarpulla, MichaelMn L3,2 x-ray absorption spectroscopy and magnetic circular dichroism in ferromagnetic Ga1-xMnxPWe have measured the X-ray absorption (XAS) and X-ray magnetic circular dichroism (XMCD) at the Mn i32 edges in ferromagnetic Ga1-xMrixP films for 0.018<x<0.042. Large XMCD asymmetries at the L3 edge indicate significant spin-polarization of the density of states at the Fermi energy. The spectral s...X-ray absorption; Ferromagnetic semiconductors; X-ray magnetic circular dichroism (XMCD); Gallium Manganese Phosphide; Gallium arsenide2007
8 Scarpulla, MichaelNonmagnetic compensation in ferromagnetic Ga1-xMnxAs and Ga1-xMnxP synthesized by ion implantation and pulsed-laser meltingThe electronic and magnetic effects of intentional compensation with nonmagnetic donors are investigated in the ferromagnetic semiconductors Ga1−xMnxAs and Ga1−xMnxP synthesized using ion implantation and pulsed-laser melting. It is demonstrated that compensation with nonmagnetic donors and MnI ...Ferromagnetic semiconductors2008
9 Scarpulla, MichaelSuppression of hole-mediated ferromagnetism in Ga1-xMnxP by hydrogenWe report the passivation of the Mn acceptors in Ga1−xMnxP upon exposure to a hydrogen plasma. The as-grown films are nonmetallic and ferromagnetic with a Curie temperature of TC=55 K. After hydrogenation the sample resistivity increases by approximately three orders of magnitude at room tempera...Ferromagnetic semiconductors; Hydrogenation2008
1 - 25 of 9