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| Creator | Title | Description | Subject | Date | ||
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 | Williams, Clayton C. | Lateral dopant profiling in MOS structures on a 100 nm scale using scanning capacitance microscopy | Scanning capacitance microscopy and atomic force microscopy have been used to image the extent of lateral dopant diffusion in MOS structures. The data are capacitance vs. voltage measurements made on a submicron scale. The technique is non-destructive when imaging uncleaved samples. New experim... | Scanning capacitance microscopy; Dopant profiling | 1990 |
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