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1 - 25 of 8
| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Scarpulla, Michael | Enhanced absorption in optically thin solar cells by scattering from embedded dielectric nanoparticles | Abstract: We present a concept for improving the efficiency of thin-film solar cells via scattering from dielectric particles. The particles are embedded directly within the semiconductor absorber material with sizes on the order of one wavelength. Importantly, this geometry is fully compatible wit... | 2010 | |
| 2 |
 | Scarpulla, Michael | Heat flow model for pulsed laser melting and rapid solidification of ion implanted GaAs | In order to further understand the pulsed-laser melting (PLM) of Mn and N implanted GaAs, which we have used to synthesize thin films of the ferromagnetic semiconductor Ga1−xMnxAs and the highly mismatched alloy GaNxAs1−x, we have simulated PLM of amorphous (a-) and crystalline (c-) GaAs. We pre... | 2010 | |
| 3 |
 | Scarpulla, Michael | Investigating sputtered Cu2Si1-xSnxS3 (CSTS) for earth abundant thin film photovoltaics | This study investigates the synthesis of chalcopyrite Cu2Si1-xSnxS3 (CSTS) thin films for photovoltaic solar cell absorber layers. Preliminary results indicate that layered sputtering of Cu, Sn, and Si followed by annealing in a sulfur atmosphere at 500⁰C does not provide adequate mixing or sulfu... | 2010 | |
| 4 |
 | Chaudhuri, Reaz A. | Interlaminar shear stresses around an internal part-through hole in a stretched laminated composite plate | The equilibrium/compatibility method, which is a semi-analytical post-processing method, is employed for computation of hitherto unavailable through-thickness variation of interlaminar (transverse) shear stresses in the vicinity of the bi-layer interface circumferential re-entrant corner line of an... | 2010-03 | |
| 5 |
 | Chaudhuri, Reaz A. | On three-dimensional singular stress/residual stress fields at the front of a crack/anticrack in an orthotropic/orthorhombic plate under anti-plane shear loading | A novel eigenfunction expansion technique, based in part on separation of the thickness-variable, is developed to derive three-dimensional asymptotic stress field in the vicinity of the front of a semi-infinite through-thickness crack/anticrack weakening/reinforcing an infinite orthotropic/orthorhom... | 2010-07 | |
| 6 |
 | Scarpulla, Michael | Probing semiconductor band structures and heterojunction interface properties with ballistic carrier emission: GaAs/AlxGa1-xAs as a model system | Utilizing three-terminal tunnel emission of ballistic electrons and holes in a planar tunnel transistor with a Mott-barrier collector, we have developed a method to self-consistently determine the energy gap of a semiconductor and band discontinuities at a semiconductor heterojunction without using... | 2010-06 | |
| 7 |
| Chaudhuri, Reaz A. | Transverse shear stress distribution through thickness near an internal part-through elliptical hole in a stretched plate | A semi-analytical post-processing method, termed the equilibrium/compatibility method here, is used for computation of hitherto unavailable through-thickness variation of transverse shear stresses in the vicinity of the circumferential re-entrant corner line of an internal part-through elliptical ... | 2010-03 | |
| 8 |
 | Chaudhuri, Reaz A. | Three-dimensional singular stress field at the front of a crack and lattice crack deviation (LCD) in a cubic single crystal plate | A novel eigenfunction expansion technique, based in part on separation of the thickness variable, is developed to derive three-dimensional asymptotic stress fields in the vicinity of the front of a semi-infinite through-crack weakening an infinite plate made of a homogeneous cubic single crystal. C... | 2010-05-12 |
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