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Creator | Title | Description | Subject | Date |
1 |
 | Stringfellow, Gerald B. | Effects of surfactants Sb and Bi on the incorporation of zinc and carbon in III/V materials grown by organometallic vapor-phase epitaxy | The incorporation of both dopants and background impurities during the organometallic vapor phase epitaxial _x0002_OMVPE_x0003_ growth of GaAs, GaInP, and GaP has been significantly altered by the use of the surfactants Sb and Bi. Sb and Bi are isoelectronic with the group V host elements, and so ... | Physical and chemical processes; Surfactants isoelectronic; Electrochemical C-V profilometry | 2006 |
2 |
 | Tiwari, Ashutosh | Electrical properties of transparent and conducting Ga doped ZnO | In this paper, we report on the metal-semiconductor transition behavior observed in transparent and conducting ZnO:Ga films grown by pulsed-laser deposition. The electrical resistivity measurements were carried out on ZnO films with varying Ga concentration in the temperature range of 14 to 300 K. ... | Transparent conducting oxides; ZnO; Gallium; Metallic conductivity | 2006 |
3 |
 | Liu, Feng | Fabricating artificial nanowells with tunable size and shape by using scanning tunneling microscopy | The authors report a method of precisely fabricating the large-scale nanocrystals with well-defined shape and size. The (111) oriented Pb islands deposited on Si(111)-7x7 substrate were investigated with a manipulation technique based on scanning tunneling microscopy. By applying a series of voltage... | Artificial nanowells | 2006 |
4 |
 | Tiwari, Ashutosh | Ferromagnetism in Co doped CeO2: observation of giant magnetic moment with a high Curie temperature | We report room temperature ferromagnetism in single crystal Ce1−xCoxO2−δ (x≤0.05) films deposited on a LaAlO3(001) substrate. Films were grown by a pulsed laser deposition technique and were thoroughly characterized using x-ray diffraction, high-resolution transmission electron microscopy cou... | CeO2; Cobalt | 2006 |
5 |
 | Liu, Feng | Intrinsic current-voltage properties of nanowires with four-probe scanning tunneling microscopy: a conductance transition of ZnO nanowire | We report intrinsic current-voltage properties of ZnO nanowire measured by a four-tip scanning tunneling microscopy (F-STM). It is found that after bending the nanowire with the F-STM the conductance is reduced by about five orders of magnitude. The cathodoluminescent spectra indicate that the ZnO n... | ZnO nanowire; Four-probe; Four-tip; F-STM; Conductance transition | 2006 |
6 |
 | Tiwari, Ashutosh | Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO | This letter reports the metallic conductivity in Ga:ZnO system at room temperature and a metal-semiconductor transition (MST) behavior at low temperatures. Zn0.95Ga0.05O films, deposited by pulsed laser deposition in the pressure range of ~10−2 Torr of oxygen, were found to be crystalline and exhi... | Transparent conducting oxides; ZnO; Gallium; Metallic conductivity | 2006 |
7 |
 | Tiwari, Ashutosh | Methods of forming three-dimensional nanodot arrays in a matrix | Nanostructures and methods of making nanostructures having self-assembled nanodot arrays wherein nanodots are self-assembled in a matrix material due to the free energies of the nanodot material and/or differences in the Gibb's free energy of the nanodot materials and matrix materials. | Nanodots | 2006 |
8 |
 | Scarpulla, Michael | Mn L3,2 x-ray absorption and magnetic circular dichroism in ferromagnetic Ga1-xMnxP | We have measured the x-ray absorption and x-ray magnetic circular dichroism (XMCD) at the Mn L3,2 edges in ferromagnetic Ga1−xMnxP films for 0.018≤x≤0.042. Large XMCD asymmetries at the L3 edge indicate significant spin polarization of the density of states at the Fermi energy. The temperatur... | X-ray absorption; Gallium Arsenide; Ferromagnetic semiconductors | 2006 |
9 |
 | Ostafin, Agnes | Monitoring the synthesis and composition analysis of microsilica encapsulated acetylacetonatocarbonyl triphenylphosphinerhodium catalyst by inductively coupled plasma (ICP) techniques | Abstract-A novel technique to monitor the synthesis process of encapsulated acetylacetonatocarbonyl triphenylphosphinerhodium within a microsilica nanoshell has been studied using inductively coupled plasma (ICP) techniques. Nanospheres sized around 50-100 nm were obtained and ICP was used to quanti... | | 2006 |
10 |
 | Liu, Feng | Nature of reactive O2 and slow CO2 evolution kinetics in CO oxidation by TiO2 supported Au cluster | Recent experiments on CO oxidation reaction using seven-atom Au clusters deposited on TiO2 surface correlate CO2 formation with oxygen associated with Au clusters. We perform first principles calculations using a seven-atom Au cluster supported on a reduced TiO2 surface to explore potential candidat... | Au clusters; TiO2; Kinetic evolution | 2006 |
11 |
 | Scarpulla, Michael | Compositional tuning of ferromagnetism in Ga1-xMnxP | We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018 to 0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-me... | Gallium arsenide; Ferromagnetic semiconductors | 2006-12 |
12 |
 | Liu, Feng | Determination of the Ehrlich-Schwoebel barrier in epitaxial growth of thin films | We demonstrate an approach for determining the "effective" Ehrlich-Schwoebel (ES) step-edge barrier, an important kinetic constant to control the interlayer mass transport in epitaxial growth of thin films. The approach exploits the rate difference between the growth and/or decay of an adatom and a... | Ehrlich-Schwoebel barrier; Epitaxial growth; Step-edge barrier; Adatoms | 2006-11 |
13 |
 | Liu, Feng | Influence of quantum size effects on Pb island growth and diffusion barrier oscillations | Quantum size effects are successfully exploited in manipulating the growth of (111) oriented Pb islands on Si(111) substrate with a scanning tunneling microscope. The growth dynamics and morphology displayed can be well controlled through the quantum size effects defined by the island thicknesses ... | Quantum size effects; QSE; Pb island; Diffusion barrier oscillations | 2006-08 |
14 |
 | Liu, Feng | Origin of intergranular embrittlement of Al alloys induced by Na and Ca segregation: grain boundary weakening | Using a first-principles computational tensile test, we show that the ideal tensile strength of an Al grain boundary (GB) is reduced with both Na and Ca GB segregation. We demonstrate that the fracture occurs in the GB interface, dominated by the break of the interfacial bonds. Experimentally, we f... | Intergranular embrittlement; Grain boundary; Intergranular fracture | 2006-06 |
15 |
 | Liu, Feng | Pressure-induced transition in magnetoresistance of single-walled carbon nanotubes | We applied hydrostatic pressure (up to 10 GPa) to single-walled carbon nanotube bundles at low temperature (down to 2 K) to measure their magnetoresistance (MR) in a field up to 12 T. We found a pressure-induced transition in MR from positive to negative in the high-field regime. The onset of the tr... | Single-walled carbon nanotubes; Pressure-induced | 2006-07 |
16 |
 | Liu, Feng | Quantum size effect on adatom surface diffusion | Using scanning tunneling microscopy, we demonstrate that the nucleation density of Fe islands on the surface of nanoscale Pb films oscillates with the film thickness, providing a direct manifestation of the quantum size effect on surface diffusion. The Fe adatom diffusion barriers were derived to be... | Quantum size effect; QSE; Adatoms; Surface diffusion; Fe islands; Nanoscale metallic structures; Epitaxial growth; Pb films | 2006-12 |
17 |
 | Liu, Feng | Surface mobility difference between Si and Ge and its effect on growth of SiGe alloy films and islands | Based on first-principles calculations of surface diffusion barriers, we show that on a compressive Ge(001) surface the diffusivity of Ge is 102-103 times higher than that of Si in the temperature range of 300 to 900 K, while on a tensile surface, the two diffusivities are comparable. Consequently, ... | Surface mobility; SiGe film; Strained thin films; Surface diffusion barriers | 2006-01 |