UScholar Works
 
Filters: Department: "Materials Science & Engineering" Collection: "ir_uspace"
1 - 25 of 8
Number of results to display per page
CreatorTitleDescriptionSubjectDate
1 Stringfellow, Gerald B.Correlation between surface structure and ordering in GaInPGa and In atoms in Ga0.52In0.48P layers spontaneously segregate to form alternating In- and Ga-rich {111} monolayers during organometallic vapor phase epitaxial (OMVPE) growth on (001) oriented GaAs substrates, thus forming the CuPt ordered structure. This ordering phenomenon is believed to be drive...Transformations; Absorbtion spectra; Surface Properties1996
2 Stringfellow, Gerald B.Solid phase immiscibility in GaInNThe large difference in interatomic spacing between GaN and InN is found to give rise to a solid phase miscibility gap. The temperature dependence of the binodal and spinodal lines in the Ga1xInxN system was calculated using a modified valence-force-field model where the lattice is allowed to relax ...Interatomic spacing; Valence-force field; epitaxial growth1996
3 Stringfellow, Gerald B.Surface photoabsorption study of the effect of V/III ratio on ordering in GaInPCu-Pt ordering is widely observed in Ga0.5In0.5P layers grown by organometallic vapor phase epitaxy. The degree of order is a strong function of the input partial pressure of the phosphorus precursor, i.e., the V/III ratio, during growth. By observing the surface structure using in situ surface p...Degree of order; Photoluminescence; Transmission electron microscopy1996
4 Liu, FengInterplay of stress, structure, and stoichiometry in Ge-covered Si(001)By calculating the evolution of surface energies and surface stress tensors of Ge-covered Si(001) with increasing Ge coverage, we derive the most probable Ge stoichiometry in the subsurface regions beyond 1 monolayer coverage. We compare the calculated surface reconstruction and surface stress at th...Ge-covered; Si(001); Stress; Structure; Surface stress tensors1996-04
5 Stringfellow, Gerald B.Effects of V/III ratio on ordering in GaInP: atomic scale mechanismsGa0.5In0.5P layers have been grown by organometallic vapor-phase epitaxy using various values of input V/III ratio for two phosphorus precursors, phosphine, the conventional precursor, and tertiarybutylphosphine (TBP), a newly developed, less-hazardous precursor. For growth on nominally (001) GaAs s...Photoabsorption spectroscopy; Transmission electron diffraction; Phosphorus precursor1996-05-01
6 Stringfellow, Gerald B.; Williams, Clayton C.Spatial mapping of ordered and disordered domains of GaInP by near-field scanning optical microscopy and scanning capacitance microscopyImaging of topography, locally induced photoluminescence and Fermi-level pinning in adjacent ordered and disordered domains on a cleaved GaInP sample is performed using a near-field scanning optical microscope and scanning capacitance microscope at room temperature in air. Highly localized photolumi...Gallium Phosphides; Surface Structure; Photoluminescence1996-04-13
7 Stringfellow, Gerald B.Surface photoabsorption study of the effect of substrate misorientation on ordering in GaInPSubstrate orientation strongly affects Cu-Pt ordering in Ga0.5In0.5P layers grown by organometallic vapor phase epitaxy. In situ surface photoabsorption SPA measurements were used to measure the concentration of 1 10-oriented P dimers, characteristic of the 2 4 reconstructed surface, as a functio...P-dimer concentration; Photoluminescence measurements; Surface reconstruction1996-04-15
8 Stringfellow, Gerald B.Surface photoabsorption study of the effects of growth temperature and V/III ratio on ordering in GaInPSurface photoabsorption (SPA) measurements were used to clarify the Cu-Pt ordering mechanism in Ga0.5In0.5P layers grown by organometallic vapor phase epitaxy. The Cu-Pt ordering is strongly affected by the growth temperature and the input partial pressure of the phosphorus precursor, i.e., the V/II...P-dimer concentration; Oriented phosphorus dimers; Surface reconstruction1996-05-01
1 - 25 of 8