UScholar Works
 
Filters: Department: "Materials Science & Engineering" Collection: "ir_uspace"
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CreatorTitleDescriptionSubjectDate
1 Stringfellow, Gerald B.Atomic force microscopy study of ordered GaInPExamines the nature of the steps on the surface of gallium indium phosphide lattice layers matched to gallium arsenide substrates using atomic force microscopy. Temperatures of organometallic vapor phase epitaxy used; Relation of height of steps with misorientation angle; Link of supersteps with the...Surface chemistry; Lattice theory1995
2 Stringfellow, Gerald B.; Williams, Clayton C.Atomic ordering of GaInP studied by Kelvin probe force microscopyThe atomic ordering of GaInP has been established and studied by a variety of methods, including transmission electron microscopy, cathodoluminescence, and photoluminescence. In this work, a Kelvin probe force microscope _x0002_KPFM_x0003_ has been employed to image several GaInP samples previous...Cathodoluminescence; Photoluminescence; Surface morphology1995
3 Stringfellow, Gerald B.Surface photo-absorption studies of the chemical structure of GaInP grown by organometallic vapor phase epitaxyThe surface structure of Ga0.52In0.48P was studied by surface photoabsorption. An absorption peak due to P dimers on Ga0.52In0.48P was observed at 400 nm, shorter than for InP (430 nm). From comparison with results for GaAs and InP, the data are interpreted to indicate that at a tertiarybutylphos...Absorption peak; Ordering; Substrate orientation1995
4 Liu, FengElectronic and elastic properties of edge dislocations in SiAb initio, tight-binding, and classical calculations have been done for (a/2)( 110) edge dislocation dipoles in Si at separations of 7.5-22.9 A in unit cells comprising 32-288 atoms. These calculations show states associated with the cores relatively deep in the band gap (~ 0.2 eV) despite the abse...Edge dislocations1995-06
5 Liu, FengSelf-consistent tight-binding methodA self-consistent tight-binding formalism is described. The self-consistency is achieved by the introduction of a chemical hardness matrix and a generalization of the Huckel model to make the tight-binding Hamiltonian an implicit functional of the charge density. Studies of the band structures of d...Tight-binding method; Self-consistency; Huckel model1995-10
6 Stringfellow, Gerald B.Effect of step structure on ordering in GaInPExamines the effect of step structure on ordering in gallium indium phosphite (GaInP) using atomic force microscopy. Coverage of the surface by islands several monolayers in height with elongated direction; Formation of the edges of the islands; Role of the observations in explaining the nature of t...Gallium indium phosphite (GaInP); Twin boundaries1995-11-12
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