UScholar Works
 
Filters: Department: "Materials Science & Engineering" Collection: "ir_uspace"
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CreatorTitleDescriptionSubjectDate
1 Tiwari, AshutoshTb2O3 thin films: An alternative candidate for high-k dielectric applicationsWe are reporting the growth and structural, optical, and dielectric properties of Tb2O3, a relatively unexplored high-k dielectric material. A pulsed-laser deposition technique was used to grow Tb2O3 thin-films on four different substrates: Si(100), SrTiO3(100), LaAlO3(100), and MgO(100). High resol...2014-01-01
2 Stringfellow, Gerald B.Effect of oxygen incorporation in semi-insulating (AlxGa1-x)yIn1-yPDiscusses a study conducted on oxygen-doped, semi-insulating layers of (aluminum-gallium) indium phosphide grown on gallium arsenide using organometallic vapor phase epitaxy. Effect of oxygen doping on semi-insulating layers of the substance; Secondary-ion mass spectrometry measurements; Measured co...Inactive interstitial atoms; Energy-dispersive spectoscopy; intentional oxygen1992
3 Liu, FengFirst-principles study of impurity segregation in edge dislocations in SiUsing ab initio calculations, the segregation of As, Ga, and Ge atoms in the core regions of perfect edge dislocations in Si is examined. When all nearest neighbors of an impurity are Si atoms, As favors the core site at maximum compression and has a segregation energy of 0.25 eV/atom. Ga and Ge im...First-principles; Impurity segregation; Edge dislocations2000-01
4 Tiwari, AshutoshSelf-aligned passivated copper interconnects: a novel technique for making interconnections in ultra large scale integration device applicationsWe have developed a technique to grow self-aligned epitaxial Cu/MgO films on Si (100) using a Pulsed Laser Deposition Method. In this method we deposit a uniform film of Cu/Mg (5-7%) alloy over Si (100) at room temperature using TiN as an intermediate buffer layer. As a result of HRTEM (with spatial...Passivated copper interconnects; Diffusion barriers; Copper diffusion; Tantalum nitride2002
5 Liu, FengFirst-principles study of electronic properties of biaxially strained silicon: effects on charge carrier mobilityUsing first-principles method, we calculate the electronic band structure of biaxially strained silicon, from which we analyze the change in electron and hole effective mass as a function of strain and determine the mobility of electrons and holes in the biaxially strained silicon based on Boltzmann...Biaxially strained silicon; Boltzmann transport theory2008-12
6 Liu, FengMechanical stability of ultrathin Ge/Si film on SiO2: the effect of Si/SiO2 interfaceWe perform two-dimensional linear elastic finite element analysis to investigate the mechanical stability of ultrathin Ge/Si film grown on or bonded to SiO2, using imperfect interface elements between Si and SiO2 to model Si/SiO2 interfacial slippage. We demonstrate that the overall composite film i...Ultrathin films; Si/SiO2 interface; Mechanical stability2005
7 Tiwari, AshutoshObservation of the inverse spin hall effect in ZnO thin films: an all-electrical approach to spin injection and detectionThe inverse spin Hall effect (ISHE) is a newly discovered, quantum mechanical phenomenon where an applied spin current results in the generation of an electrical voltage in the transverse direction. It is anticipated that the ISHE can provide a more simple way of measuring spin currents in spintroni...2014-01-01
8 Liu, FengElectronic strengthening of graphene by charge dopingGraphene is known as the strongest 2D material in nature, yet we show that moderate charge doping of either electrons or holes can further enhance its ideal strength by up to 17%, based on first-principles calculations. This unusual electronic enhancement, versus conventional structural enhancement,...2012-01-01
9 Liu, FengStrain-engineered surface transport in Si(001): complete isolation of the surface state via tensile strainBy combining density functional theory, nonequilibrium Green's function formulism and effective- Hamiltonian approaches, we demonstrate strain-engineered surface transport in Si(001), with the complete isolation of the Si surface states from the bulk bands. Our results show that sufficient tensile s...2013-01-01
10 Liu, FengUnderstanding graphene production by ionic surfactant exfoliation: a molecular dynamics simulation studyWe have simulated sodium dodecyl sulfate (SDS) surfactant/waterþbilayer graphene mixture system to investigate two mechanisms of graphene exfoliation: changing the interlayer distance and sliding away the relative distance. By calculating the total energy as a function of the interlayer (sliding-aw...2014-01-01
11 Tiwari, AshutoshManifestation of two-channel nonlocal spin transport in the shapes of Hanle curvesThe dynamics of charge-density fluctuations in a system of two tunnel-coupled wires contains two diffusion modes with dispersion iω = Dq2 and iω = Dq2 + 2τt, where D is the diffusion coefficient and τt is the tunneling time between the wires. The dispersion of corresponding spin-density modes de...2014-01-01
12 Liu, FengExceptional optoelectronic properties of hydrogenated bilayer siliceneSilicon is arguably the best electronic material, but it is not a good optoelectronic material. By employing first-principles calculations and the cluster-expansion approach, we discover that hydrogenated bilayer silicene (BS) shows promising potential as a new kind of optoelectronic material. Most ...2014-01-01
13 Ostafin, AgnesCombined deletion of mouse dematin-headpiece and ß-adducin exerts a novel effect on the spectrin-actin junctions leading to erythrocyte fragility and hemolytic AnemiaDematin and adducin are actin-binding proteins of the erythrocyte "junctional complex." Individually, they exert modest effects on erythrocyte shape and membrane stability, and their homologues are expressed widely in non-erythroid cells. Here we report generation and characterization of double knoc...2007
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