UScholar Works
 
Filters: Department: "Materials Science & Engineering" Collection: "ir_uspace"
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CreatorTitleDescriptionSubjectDate
1 Pugmire, Ronald J.Soot formation during coal pyrolysisSoot can be found in almost all combustion and pyrolysis systems. In a coal system, the impact of soot on coal combustion can be identified in two ways. First, soot particles suspended in the combustion flame significantly enhance radiative heat transfer near the burner due to their large surface ar...2001
2 Stringfellow, Gerald B.Step structure and ordering in GaInPPresents information from an experiment on the step structure and ordering in GalnP. Information on the step spacing and degree of order in the epitaxial layers; Details on the experiment; Results from the experiment.Physics; Ordering; Steps1998
3 Stringfellow, Gerald B.Step structure and ordering in Te-doped GaInPThe step structure and CuPt ordering in GaInP layers grown by organometallic vapor phase epitaxy on singular GaAs substrates have been investigated as a function of Te (DETe) doping using atomic force microscopy, and electrical and optical properties measurements. The degree of order decreases for T...Surfaces; Te doping; Bandgap energy1998
4 Stringfellow, Gerald B.Step structure and ordering in Zn-doped GaInPPresents the results of a study of Zinc dopant effects on both step structure and ordering in GaInP in an effort to further clarify the disordering mechanism. Comparison of the results obtained for Zinc with those reported for tellurium; Experiment; Results; Discussion; Conclusion.Gallium Compounds; Zinc; Ordering1999
5 Stringfellow, Gerald B.Effects of surfactants Sb and Bi on the incorporation of zinc and carbon in III/V materials grown by organometallic vapor-phase epitaxyThe incorporation of both dopants and background impurities during the organometallic vapor phase epitaxial _x0002_OMVPE_x0003_ growth of GaAs, GaInP, and GaP has been significantly altered by the use of the surfactants Sb and Bi. Sb and Bi are isoelectronic with the group V host elements, and so ...Physical and chemical processes; Surfactants isoelectronic; Electrochemical C-V profilometry2006
6 Scarpulla, MichaelAir shear driven flow of thin perfluoropolyether polymer filmsWe have studied the wind driven movement of thin perfluoropolyether (PFPE) polymer films on silicon wafers and CNx overcoats using the blow-off technique. The ease with which a liquid polymer film moves across a surface when sheared is described by a shear mobility xS , which can be interpreted both...Perfluoropolyether; Polymer films; Air shear; Shear mobility2003
7 Stringfellow, Gerald B.Surface photoabsorption transients and ordering in GaInPHeterostructures and quantum wells can be produced in GaInP without changing the solid composition by simply varying the order parameter. Since CuPt ordering reduces the band-gap energy, changes in the order parameter induced by changes in growth conditions result in heterostructures with band-ga...Order parameters; Quantum wells; P-dimers1998-03-15
8 Liu, FengHydrogen induced Si surface segregation on Ge-covered Si(001)Using Fourier transform infrared-attenuated total reflectance spectroscopy in conjunction with hydrogen adsorption to probe surface layer composition, we observe a reversible place exchange between Ge and Si on Ge-covered Si(001) when the surface is dosed with atomic H at elevated temperatures. F...Si surface segregation; Ge-covered; Si(001)1998-10
9 Tiwari, AshutoshFerromagnetism in Cu-doped ZnO films: role of charge carriersWe report the observation of room temperature ferromagnetism in Cu-doped (5%) ZnO films grown on c-plane sapphire substrates. Films were prepared by pulsed laser deposition technique and were thoroughly characterized using several state-of-the-art characterization techniques. Hall measurements sho...Charge carriers2008
10 Liu, FengFirst-principles study of electronic properties of biaxially strained silicon: effects on charge carrier mobilityUsing first-principles method, we calculate the electronic band structure of biaxially strained silicon, from which we analyze the change in electron and hole effective mass as a function of strain and determine the mobility of electrons and holes in the biaxially strained silicon based on Boltzmann...Biaxially strained silicon; Boltzmann transport theory2008-12
11 Chaudhuri, Reaz A.Three-dimensional singular stress field at the front of a crack and lattice crack deviation (LCD) in a cubic single crystal plateA novel eigenfunction expansion technique, based in part on separation of the thickness variable, is developed to derive three-dimensional asymptotic stress fields in the vicinity of the front of a semi-infinite through-crack weakening an infinite plate made of a homogeneous cubic single crystal. C...2010-05-12
12 Liu, FengPressure-induced transition in magnetoresistance of single-walled carbon nanotubesWe applied hydrostatic pressure (up to 10 GPa) to single-walled carbon nanotube bundles at low temperature (down to 2 K) to measure their magnetoresistance (MR) in a field up to 12 T. We found a pressure-induced transition in MR from positive to negative in the high-field regime. The onset of the tr...Single-walled carbon nanotubes; Pressure-induced2006-07
13 Tiwari, AshutoshEpitaxial growth and properties of Zn1-xVxO diluted magnetic semiconductor thin filmsHere we report systematic studies on the epitaxial growth and properties of Zn1−xVxO[x=0.001-0.2] thin films deposited onto sapphire c-plane single crystals. The thin films were deposited using pulsed laser deposition technique and were found to be epitaxial in nature. X-ray diffraction and high ...ZnO; Vanadium2005
14 Scarpulla, MichaelInvestigation of combinatorial coevaporated thin film Cu 2ZnSnS4 (II): Beneficial cation arrangement in Cu-rich growthCu2ZnSn(S,Se)4 (CZTSSe) is an earth-abundant semiconductor with potential for economical photovoltaic power generation at terawatt scales. In this work, we use Raman scattering to investigate phase coexistence in combinatorial CZTS thin films grown at 325 or 470 C. The surface of the samples grown a...2014-01-01
15 Scarpulla, MichaelInvestigation of combinatorial coevaporated thin film Cu 2ZnSnS4. I. Temperature effect, crystalline phases, morphology, and photoluminescenceCu2ZnSnS4 is a promising low-cost, nontoxic, earth-abundant absorber material for thin-film solar cell applications. In this study, combinatorial coevaporation was used to synthesize individual thin-film samples spanning a wide range of compositions at low (325 C) and high (475 C) temperatures. Film...2014-01-01
16 Stringfellow, Gerald B.Electrical properties of nitrogen doped GaPThe electrical properties namely, electron concentration and mobility, have been investigated in the temperature range from 53 to 400 K for undoped and nitrogen-doped VPE GaP.Electron concentration; Ionization energy; Electron mobility1975
17 Liu, FengOrigin of intergranular embrittlement of Al alloys induced by Na and Ca segregation: grain boundary weakeningUsing a first-principles computational tensile test, we show that the ideal tensile strength of an Al grain boundary (GB) is reduced with both Na and Ca GB segregation. We demonstrate that the fracture occurs in the GB interface, dominated by the break of the interfacial bonds. Experimentally, we f...Intergranular embrittlement; Grain boundary; Intergranular fracture2006-06
18 Scarpulla, MichaelGa1-xMnxP synthesized by ion implantation and pulsed-laser meltingThe synthesis of single-crystalline epitaxial thin films of the carrier-mediated ferromagnetic phase of Ga1-xMnxP and Ga1-xMnxP-based quaternary alloys using ion implantation and pulsed-laser melting (II-PLM) has allowed for the exploration of the effect of anion substitution on ferromagnetism in Ga...2008
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