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1 Nonmagnetic compensation in ferromagnetic Ga1-xMnxAs and Ga1-xMnxP synthesized by ion implantation and pulsed-laser meltingThe electronic and magnetic effects of intentional compensation with nonmagnetic donors are investigated in the ferromagnetic semiconductors Ga1−xMnxAs and Ga1−xMnxP synthesized using ion implantation and pulsed-laser melting. It is demonstrated that compensation with nonmagnetic donors and MnI ...Ferromagnetic semiconductors2008
2 Synthesis and atomic-level characterization of Ni nanoparticles in Al2O3 matrixSingle domain magnetic nickel nanocrystals were embedded in alumina matrix using a pulsed-laser deposition technique. Structural characterization carried out at the atomic level using scanning transmission electron microscopy with atomic number contrast (STEM-Z) in conjunction with electron energy ...Nanophase magnetic materials; Alumina2002
3 Seeing the atomic orbital: first-principles study of the effect of tip termination on atomic force microscopyWe perform extensive first-principles calculations to simulate the topographical atomic-force-microscope image of an adatom on the Si(111)-(7 X 7) surface, demonstrating the feasibility of imaging not only the atoms but also the atomic orbitals. Our comparative study of tip terminations shows that ...First-principles; Tip termination; Adatoms2003-06
4 Creation of "quantum platelets" via strain-controlled self-organization at stepsWe demonstrate, by both theory and experiment, the strain-induced self-organized formation of "quantum platelets," monolayer-thick islands of finite dimensions. They form at the early stage of heteroepitaxial growth on a substrate with regularly spaced steps, and align along the steps. In the direc...Quantum platelets; Strain-controlled self-organization; Monolayer-thick islands; Heteroepitaxial growth2000-12
5 Step structure and ordering in Te-doped GaInPThe step structure and CuPt ordering in GaInP layers grown by organometallic vapor phase epitaxy on singular GaAs substrates have been investigated as a function of Te (DETe) doping using atomic force microscopy, and electrical and optical properties measurements. The degree of order decreases for T...Surfaces; Te doping; Bandgap energy1998
6 Growth and characterization of TaN/TiN superlattice structuresEpitaxial B1 NaCl-structured TaN(3 nm)/TiN(2 nm) superlattice structures were grown on Si(100) substrates with a TiN buffer layer, using pulsed-laser deposition. A special target assembly was used to manipulate the thickness of each layer. X-ray diffraction, transmission electron microscopy, and ...Diffusion barriers; Copper diffusion; Tantalum nitride2003
7 Pressure-induced hard-to-soft transition of a single carbon nanotubeWe demonstrate a hydrostatic pressure-induced hard-to-soft transition of an isolated single wall carbon nanotube, using classical and ab initio constant-pressure molecular-dynamics simulations and continuum elastic theory analysis. At low pressure, the carbon tube is hard. Above a critical pressur...Carbon nanotubes; Hard-to-soft transition2004-10
8 Heterostructures in GaInP grown using a change in V/III ratioA natural monolayer 111% superlattice -- the CuPt ordered structure -- is formed spontaneously during organometallic vapor phase epitaxial OMVPE growth of Ga0.52In0.48P. The extent of this ordering process is found to be a strong function of the input partial pressure of the phosphorus precursor dur...Superlattices; Alloys; Atomic ordering; Heterostructures1997-02-24
9 Fabrication of GaNxAs1-x quantum structures by focused ion beam patterningA novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaNxAs1-x film by amorphization through ion implantation followed by regrowth upon r...Gallium arsenide; Quantum dots; Quantum wires; Thermal annealing2005
10 Grain size and texture of Cu2ZnSnS4 thin films synthesized by co-sputtering binary sulfides and annealing: effects of processing conditions and sodiumWe investigate the synthesis of kesterite Cu2ZnSnS4 (CZTS) polycrystalline thin films using cosputtering from binary sulfide targets followed by annealing in sulfur vapor at 500 ?C to 650 ?C. The films are the kesterite CZTS phase as indicated by x-ray diffraction, Raman scattering, and optical abso...2011
11 Enhanced absorption in optically thin solar cells by scattering from embedded dielectric nanoparticlesAbstract: We present a concept for improving the efficiency of thin-film solar cells via scattering from dielectric particles. The particles are embedded directly within the semiconductor absorber material with sizes on the order of one wavelength. Importantly, this geometry is fully compatible wit...2010
12 Surfactant controlled growth of GaInP by organometallic vapor phase epitaxyThe effect of the surfactant Sb has been studied for GaInP semiconductor alloys grown by organometallic vapor phase epitaxy. Dramatic changes in the optical and electrical properties of GaInP with CuPt ordering have been observed. A small concentration of triethylantimony TESb in the vapor is fou...Semiconductors; Surface active agents2000
13 Sb enhancement of lateral superlattice formation in GaInPEpitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v)=0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by ...Tin; Epitaxy; Photoluminescence2001
14 Magnetism of Al-Mn quasicrystalsThe effect of symmetry and concentration of Mn on the magnetism of Al-Mn quasicrystals has been investigated through self-consistent density-functional calculations using molecular clusters and supercell band-structure schemes. A single Mn atom surrounded by 54 Al atoms in an icosahedral or a cuboct...Al-Mn quasicrystals; Self-consistent; Density-functional calculations1993-07
15 Self-aligned passivated copper interconnects: a novel technique for making interconnections in ultra large scale integration device applicationsWe have developed a technique to grow self-aligned epitaxial Cu/MgO films on Si (100) using a Pulsed Laser Deposition Method. In this method we deposit a uniform film of Cu/Mg (5-7%) alloy over Si (100) at room temperature using TiN as an intermediate buffer layer. As a result of HRTEM (with spatial...Passivated copper interconnects; Diffusion barriers; Copper diffusion; Tantalum nitride2002
16 SnS thin-films by RF sputtering at room temperatureTin monosulfide (SnS) is of interest as a potential solar cell absorber material. We present a preliminary investigation of the effects of sputtering conditions on SnS thin-film structural, optical, and electronic properties. Films were RF sputtered from an SnS target using an argon plasma. Resi...2011
17 Use of surfactant Sb to induce triple period ordering in GaInPA surfactant is used to induce an ordered structure in an epitaxial layer. The addition of small amounts of triethylantimony during the organometallic vapor phase epitaxy growth of GaInP on 001 GaAs substrates is shown to remove CuPt ordering with a resultant increase in band gap energy. Increasi...Organometallic; Thermodynamics; Surfactant2000-03-13
18 Modified Timoshenko formula for bending of ultrathin strained bilayer filmsMechanical bending of nanoscale thin films can be quite different from that of macroscopic thick films. However, current understanding of mechanical bending of nanoscale thin strained bilayer films is often limited within the Timoshenko model [Timoshenko, J. Opt. Soc. Am. 11, 233 (1925)], which was ...Timoshenko formula; Bending theory; Ultrathin films; Strained nanoscale thin films; Nanofilms2008
19 Suppression of hole-mediated ferromagnetism in Ga1-xMnxP by hydrogenWe report the passivation of the Mn acceptors in Ga1−xMnxP upon exposure to a hydrogen plasma. The as-grown films are nonmetallic and ferromagnetic with a Curie temperature of TC=55 K. After hydrogenation the sample resistivity increases by approximately three orders of magnitude at room tempera...Ferromagnetic semiconductors; Hydrogenation2008
20 Epitaxial growth and properties of Zn1-xVxO diluted magnetic semiconductor thin filmsHere we report systematic studies on the epitaxial growth and properties of Zn1−xVxO[x=0.001-0.2] thin films deposited onto sapphire c-plane single crystals. The thin films were deposited using pulsed laser deposition technique and were found to be epitaxial in nature. X-ray diffraction and high ...ZnO; Vanadium2005
21 Kinetically controlled order/disorder structure in GaInPA Ga0.52In0.58p order/disorder heterostructure having a band-gap energy difference exceeding 160 meV has been grown by organometallic vapor phase epitaxy. The two layers were grown on a nominally (OOl)-oriented GaAs substrate misoriented by 3° toward the [110] direction in the lattice. The disorder...Indium phosphides; Gallium Phosphides; Heterojunctions1994
22 Band-gap engineering of Zn1-xGaxO nanopowders: synthesis, structural and optical characterizationsWe report the preparation and detailed structural and optical characterizations of single phase gallium doped ZnO nanopowders. A low temperature solution-based technique was developed to synthesize high-purity Zn1−xGaxO (x:0-0.05) nanopowders. Structural and optical characterization experiments we...Zinc gallium oxide; ZnGaO; Nanopowders; Band-gap engineering2008
23 Adsorption and desorption of the surfactant Sb on GaInP grown by organometallic vapor phase epitaxyIt has been determined that ordering has a profound effect on the bandgap energy of many compound semiconductor alloys. Therefore, ordering must be controlled for devices such as solar cells, light emitting diodes and diode lasers. Since ordering depends on the surface properties during organomet...Time dependent surface photoabsorption (SPA); Compound semiconductor alloys2000
24 Self-assembly of two-dimensional islands via strain-mediated coarseningWe demonstrate two distinctive effects of strain-induced island-island interaction on island size and spatial distribution during coarsening of 2D islands. When coarsening proceeds via only mass transport between islands, the interaction broadens the island size distribution, leading to a power-law...Two-dimensional islands; Strain-mediated coarsening2001-08
25 Nanostressors and the nanomechanical response of a thin silicon film on an insulatorPseudomorphic three-dimensional Ge nanocrystals (quantum dots) grown on thin silicon-on-insulator substrates can induce significant bending of the silicon template layer that is local on the nanometer scale. We use molecular dynamics simulations and analytical models to confirm the local bending of...Nanostressors; Nanomechanical response; Thin silicon film2002-09
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