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Stringfellow, Gerald B. | Influence of Sb, Bi, Tl, and B on the incorporation of N in GaAs | GaAs:N is an interesting material for many devices due to its unique compositional variation of band gap. Small amounts of N lead to a strong decrease in band gap energy as well as lattice constant. The further addition of In or Sb leads to quaternary alloys with band gap energies below 1.4 eV latti... | Antimony; Gallium Arsenide; Nitrogen | 2002 |
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