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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
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Stringfellow, Gerald B. | Influence of tellurium doping on step bunching of GaAs (001) vicinal surfaces grown by organometallic vapor phase epitaxy | Atomic force microscopy has been used to investigate the influence of controlled tellurium Te incorporation on the step structure of GaAs grown by organometallic vapor phase epitaxy on vicinal 001 surfaces. Te doping, using the precursor diethyltelluride, is found to markedly decrease the surface r... | Epitaxial growth; Misorientation; Organometallic vapor phase epitaxy | 1998 |
| 2 |
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Stringfellow, Gerald B. | Step structure and ordering in GaInP | Presents information from an experiment on the step structure and ordering in GalnP. Information on the step spacing and degree of order in the epitaxial layers; Details on the experiment; Results from the experiment. | Physics; Ordering; Steps | 1998 |
| 3 |
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Stringfellow, Gerald B. | Step structure and ordering in Te-doped GaInP | The step structure and CuPt ordering in GaInP layers grown by organometallic vapor phase epitaxy on singular GaAs substrates have been investigated as a function of Te (DETe) doping using atomic force microscopy, and electrical and optical properties measurements. The degree of order decreases for T... | Surfaces; Te doping; Bandgap energy | 1998 |
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