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Stringfellow, Gerald B. | Organometallic vapor phase epitaxial growth of AlGaInP | Alx Ga,, In, _ x _ y P with x + y = 0.51, lattice matched to the GaAs substrate, has been grown by organometaUic vapor phase epitaxy. The simple, horizontal, IR heated system operates at atmospheric pressure using the reactants TMA1, TMGa, TMln, PH3, and K2. Alloys giving room temperature, band edge... | Liquid phase epitaxial growth; LPE; Alloys; Surface morphology | 1985 |
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