UScholar Works
 
Filters: Department: "Electrical & Computer Engineering" Collection: "ir_uspace" Subject: "Surfactants"
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CreatorTitleDescriptionSubjectDate
1 Stringfellow, Gerald B.; Zhu, Jing Yi; Liu, FengDual-surfactant effect to enhance p-type doping in III-V semiconductor thin filmsSurfactant effects are usually achieved by the addition of a single surface element. We demonstrate by first-principles calculations a dual-surfactant effect of Sb and H on enhancing Zn doping in organometallic vapor phase epitaxially grown GaP thin films. The combined effects of Sb and H lower sig...Surfactants; p-type doping2008-11
2 Stringfellow, Gerald B.; Rieth, Loren W.Effects of Br and Cl on organometallic vapor phase epitaxial growth and ordering in GaInPCuPt ordering in GaInP has significant effects on the electrical and optical properties. In fact, band gap reductions as large as 160 meV are potentially useful for devices. Thus, control of ordering is important. This has led to the investigation of surfactants that affect the surface processes d...Band gap reductions; Surfactants; Surface processes2004
3 Stringfellow, Gerald B.Effects of low surfactant Sb coverage on Zn and C incorporation in GaPThe use of surfactants during the vapor phase growth of III-V materials to control fundamental characteristics of epitaxial layers is becoming increasingly important. We have investigated the remarkable effects of Sb, from triethylantimony (TESb) Pyrolysis, on the Zn doping during the organometallic...Surfactants; Organometallic vapor phase epitaxy; Gallium phosphide2007
4 Stringfellow, Gerald B.Fundamentals of vapor phase epitaxial growth processesThe first success with the growth of semiconductor materials by vapor phase epitaxy (VPE) dates back to the 1950's. Today, it is the largest volume technique for the production of both Si and HI/V electronic and photonic devices. Of course, commercial processes for the growth of Si layers, dielectri...Vapor phase epitaxy; Surfactants2007
5 Stringfellow, Gerald B.; Shurtleff, James KevinSurfactant effects on doping of GaAs grown by organometallic vapor phase epitaxyRecently, the addition of the isoelectronic surfactant Sb during organometallic vapor phase epitaxy (OMVPE) of GaInP was shown to eliminate ordering, resulting in a significant change in the band gap energy. These results suggest that surfactants added during growth could have profound affects on ot...Gallium arsenide; Surfactants; Semiconductors2001
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