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CreatorTitleDescriptionSubjectDate
1 Stringfellow, Gerald B.Step structure and ordering in GaInPPresents information from an experiment on the step structure and ordering in GalnP. Information on the step spacing and degree of order in the epitaxial layers; Details on the experiment; Results from the experiment.Physics; Ordering; Steps1998
2 Stringfellow, Gerald B.Step structure and ordering in Zn-doped GaInPPresents the results of a study of Zinc dopant effects on both step structure and ordering in GaInP in an effort to further clarify the disordering mechanism. Comparison of the results obtained for Zinc with those reported for tellurium; Experiment; Results; Discussion; Conclusion.Gallium Compounds; Zinc; Ordering1999
3 Stringfellow, Gerald B.Surface photo-absorption studies of the chemical structure of GaInP grown by organometallic vapor phase epitaxyThe surface structure of Ga0.52In0.48P was studied by surface photoabsorption. An absorption peak due to P dimers on Ga0.52In0.48P was observed at 400 nm, shorter than for InP (430 nm). From comparison with results for GaAs and InP, the data are interpreted to indicate that at a tertiarybutylphos...Absorption peak; Ordering; Substrate orientation1995
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