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CreatorTitleDescriptionSubjectDate
1 Harrison, Reid R.; Rieth, Loren W.; Tathireddy, Prashant; Solzbacher, FlorianLong term in vitro stability of fully integrated wireless neural interfaces based on Utah slant electrode arrayWe herein report in vitro functional stability and recording longevity of a fully integrated wireless neural interface (INI). The INI uses biocompatible Parylene-C as an encapsulation layer, and was immersed in phosphate buffered saline (PBS) for a period of over 150 days. The full functionality ...2010
2 Rieth, Loren W; Tathireddy, Prashant; Harrison, Reid R.; Solzbacher, FlorianLong term in vitro stability of fully integrated wireless neural interfaces based on Utah slant electrode arrayWe herein report in vitro functional stability and recording longevity of a fully integrated wireless neural interface (INI). The INI uses biocompatible Parylene-C as an encapsulation layer, and was immersed in phosphate buffered saline (PBS) for a period of over 150 days. The full functionality (...2010
3 Stringfellow, Gerald B.Sb enhancement of lateral superlattice formation in GaInPEpitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v)=0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by ...Tin; Epitaxy; Photoluminescence2001
4 Stringfellow, Gerald B.; Shurtleff, James KevinSurfactant effects on doping of GaAs grown by organometallic vapor phase epitaxyRecently, the addition of the isoelectronic surfactant Sb during organometallic vapor phase epitaxy (OMVPE) of GaInP was shown to eliminate ordering, resulting in a significant change in the band gap energy. These results suggest that surfactants added during growth could have profound affects on ot...Gallium arsenide; Surfactants; Semiconductors2001
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