Creator | Title | Description | Subject | Date | ||
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1 |
![]() | Harrison, Reid R.; Rieth, Loren W.; Tathireddy, Prashant; Solzbacher, Florian | Long term in vitro stability of fully integrated wireless neural interfaces based on Utah slant electrode array | We herein report in vitro functional stability and recording longevity of a fully integrated wireless neural interface (INI). The INI uses biocompatible Parylene-C as an encapsulation layer, and was immersed in phosphate buffered saline (PBS) for a period of over 150 days. The full functionality ... | 2010 | |
2 |
![]() | Rieth, Loren W; Tathireddy, Prashant; Harrison, Reid R.; Solzbacher, Florian | Long term in vitro stability of fully integrated wireless neural interfaces based on Utah slant electrode array | We herein report in vitro functional stability and recording longevity of a fully integrated wireless neural interface (INI). The INI uses biocompatible Parylene-C as an encapsulation layer, and was immersed in phosphate buffered saline (PBS) for a period of over 150 days. The full functionality (... | 2010 | |
3 |
![]() | Stringfellow, Gerald B. | Sb enhancement of lateral superlattice formation in GaInP | Epitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v)=0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by ... | Tin; Epitaxy; Photoluminescence | 2001 |
4 |
![]() | Stringfellow, Gerald B.; Shurtleff, James Kevin | Surfactant effects on doping of GaAs grown by organometallic vapor phase epitaxy | Recently, the addition of the isoelectronic surfactant Sb during organometallic vapor phase epitaxy (OMVPE) of GaInP was shown to eliminate ordering, resulting in a significant change in the band gap energy. These results suggest that surfactants added during growth could have profound affects on ot... | Gallium arsenide; Surfactants; Semiconductors | 2001 |