Creator | Title | Description | Subject | Date | ||
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1 | Liu, Feng | Surface mobility difference between Si and Ge and its effect on growth of SiGe alloy films and islands | Based on first-principles calculations of surface diffusion barriers, we show that on a compressive Ge(001) surface the diffusivity of Ge is 102-103 times higher than that of Si in the temperature range of 300 to 900 K, while on a tensile surface, the two diffusivities are comparable. Consequently, ... | Surface mobility; SiGe film; Strained thin films; Surface diffusion barriers | 2006-01 |