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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
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Scarpulla, Michael | Carrier concentration dependencies of magnetization & transport in Ga1-xMnxAs1-yTey | We have investigated the transport and magnetization characteristics of Ga1-xMnxAs intentionally compensated with shallow Te donors. Using ion implantation followed by pulsed-laser melting, we vary the Te compensation and drive the system through a metal-insulator transition (MIT). This MIT is assoc... | Gallium arsenide; Ferromagnetic semiconductors; Magnetization; Resistivity | 2005 |
| 2 |
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Liu, Feng | Computational R&D for industrial applications | Recent advances in high-speed supercomputer and computational algorithms have brought us into a new era of computational materials science. These advances make it possible to investigate many existing materials systems that were previously considered intractable and also predict and design novel mat... | Computational materials science | 2005 |
| 3 |
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Scarpulla, Michael | Effect of film thickness on the incorporation of Mn interstitials in Ga1-xMnxAs | We have investigated the effect of film thickness on the distribution of Mn atoms at various lattice sites in Ga1−xMnxAs thin films. We find that the growth surface acts as a sink facilitating the outdiffusion of Mn interstitials sMnId, and thus reducing its concentration in the film. The outdiffu... | Interstitials; Gallium arsenide | 2005 |
| 4 |
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Tiwari, Ashutosh | Epitaxial growth and properties of MoOx(2 | We report the growth of epitaxial molybdenum oxide (MoOx,2<x<2.75) films on c plane of sapphire substrate using pulsed laser deposition in oxygen environment. The structure was characterized using x-ray diffraction, high resolution transmission electron microscopy and x-ray photoelectron spectroscop... | Epitaxy; MoO | 2005 |
| 5 |
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Tiwari, Ashutosh | Epitaxial growth and properties of Zn1-xVxO diluted magnetic semiconductor thin films | Here we report systematic studies on the epitaxial growth and properties of Zn1−xVxO[x=0.001-0.2] thin films deposited onto sapphire c-plane single crystals. The thin films were deposited using pulsed laser deposition technique and were found to be epitaxial in nature. X-ray diffraction and high ... | ZnO; Vanadium | 2005 |
| 6 |
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Bedrov, Dmitro; Smith, Grant D. | Equilibrium sampling of self-associating polymer solutions: a parallel selective tempering approach | We present a novel simulation algorithm based on tempering a fraction of relaxation-limiting interactions to accelerate the process of obtaining uncorrelated equilibrium configurations of self-associating polymer solutions. This approach consists of tempering (turning off) the attractive interactio... | Equilibrium sampling; Self-associating systems; Parallel selective tempering | 2005 |
| 7 |
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Scarpulla, Michael | Fabrication of GaNxAs1-x quantum structures by focused ion beam patterning | A novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaNxAs1-x film by amorphization through ion implantation followed by regrowth upon r... | Gallium arsenide; Quantum dots; Quantum wires; Thermal annealing | 2005 |
| 8 |
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Liu, Feng | Mechanical stability of ultrathin Ge/Si film on SiO2: the effect of Si/SiO2 interface | We perform two-dimensional linear elastic finite element analysis to investigate the mechanical stability of ultrathin Ge/Si film grown on or bonded to SiO2, using imperfect interface elements between Si and SiO2 to model Si/SiO2 interfacial slippage. We demonstrate that the overall composite film i... | Ultrathin films; Si/SiO2 interface; Mechanical stability | 2005 |
| 9 |
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Liu, Feng | Pattern formation on silicon-on-insulator | The strain driven self-assembly of faceted Ge nanocrystals during epitaxy on Si(001) to form quantum dots (QDs) is by now well known. We have also recently provided an understanding of the thermodynamic driving force for directed assembly of QDs on bulk Si (extendable to other QD systems) based on ... | Pattern formation; Silicon-on-insulator; Strain driven; Faceted Ge nanocrystals; Si(001); Directed assembly | 2005 |
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