Filters: Date: "1996-05-01" Collection: ir_uspace
1 - 25 of 2
| Creator | Title | Description | Subject | Date | ||
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Stringfellow, Gerald B. | Effects of V/III ratio on ordering in GaInP: atomic scale mechanisms | Ga0.5In0.5P layers have been grown by organometallic vapor-phase epitaxy using various values of input V/III ratio for two phosphorus precursors, phosphine, the conventional precursor, and tertiarybutylphosphine (TBP), a newly developed, less-hazardous precursor. For growth on nominally (001) GaAs s... | Photoabsorption spectroscopy; Transmission electron diffraction; Phosphorus precursor | 1996-05-01 |
| 2 |
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Stringfellow, Gerald B. | Surface photoabsorption study of the effects of growth temperature and V/III ratio on ordering in GaInP | Surface photoabsorption (SPA) measurements were used to clarify the Cu-Pt ordering mechanism in Ga0.5In0.5P layers grown by organometallic vapor phase epitaxy. The Cu-Pt ordering is strongly affected by the growth temperature and the input partial pressure of the phosphorus precursor, i.e., the V/II... | P-dimer concentration; Oriented phosphorus dimers; Surface reconstruction | 1996-05-01 |
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