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CreatorTitleDescriptionSubjectDate
1 Williams, Clayton C.; Huang, YufengDirect comparison of cross-sectional scanning capacitance microscope dopant profile and vertical secondary ion-mass spectroscopy profileThe scanning capacitance microscope (SCM) has been shown to be useful for quantitative 2D dopant profiling near the surface of silicon. An atomic force microscope is used to position a nanometer scale tip at a silicon surface, and local capacitance change is measured as a function of sample bias. A ...Oxide capacitance; Dopant profile; Oxide layer; Scanning capacitance microscopy1996-01
2 Mishchenko, EugeneElectronic Raman scattering in a magnetic fieldRaman scattering in a magnetic field is proposed as a possible method to solve the problem of whether the light scattering in high-Tc superconductors comes from conduction electrons or not. The electronic Raman light scattering in a magnetic field is studied theoretically. The semiclassical approa...Raman scattering1996-01
3 Varner, Michael W.Elevations of amniotic fluid macrophage inflammatory protein-1 alpha concentrations in women during term and preterm labor.OBJECTIVE: To determine whether elevated concentrations of macrophage inflammatory protein-1 alpha (MIP-1 alpha) in amniotic fluid (AF) are related to term and preterm labor. METHODS: Amniotic fluid was obtained from women from five different clinical situations: 1) term cesarean delivery, no labor ...Amniotic Fluid; Macrophage Inflammatory Protein-1; Obstetric Labor, Premature1996-01
4 Williams, Clayton C.Two-dimensional scanning capacitance microscopy measurements of cross-sectioned very large scale integration test structuresScanning probe technology, with its inherent two-dimensionality, offers unique capabilities for the measurement of electrical properties on a nanoscale. We have developed a setup which uses scanning capacitance microscopy (SCM) to obtain electrical information of cross-sectioned samples while simul...Oxide capacitance; Dopant profile; Scanning capacitance microscopy1996-01
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