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Creator | Title | Description | Subject | Date |
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Williams, Clayton C.; Huang, Yufeng | Direct comparison of cross-sectional scanning capacitance microscope dopant profile and vertical secondary ion-mass spectroscopy profile | The scanning capacitance microscope (SCM) has been shown to be useful for quantitative 2D dopant profiling near the surface of silicon. An atomic force microscope is used to position a nanometer scale tip at a silicon surface, and local capacitance change is measured as a function of sample bias. A ... | Oxide capacitance; Dopant profile; Oxide layer; Scanning capacitance microscopy | 1996-01 |
2 |
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Mishchenko, Eugene | Electronic Raman scattering in a magnetic field | Raman scattering in a magnetic field is proposed as a possible method to solve the problem of whether the light scattering in high-Tc superconductors comes from conduction electrons or not. The electronic Raman light scattering in a magnetic field is studied theoretically. The semiclassical approa... | Raman scattering | 1996-01 |
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Varner, Michael W. | Elevations of amniotic fluid macrophage inflammatory protein-1 alpha concentrations in women during term and preterm labor. | OBJECTIVE: To determine whether elevated concentrations of macrophage inflammatory protein-1 alpha (MIP-1 alpha) in amniotic fluid (AF) are related to term and preterm labor. METHODS: Amniotic fluid was obtained from women from five different clinical situations: 1) term cesarean delivery, no labor ... | Amniotic Fluid; Macrophage Inflammatory Protein-1; Obstetric Labor, Premature | 1996-01 |
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Williams, Clayton C. | Two-dimensional scanning capacitance microscopy measurements of cross-sectioned very large scale integration test structures | Scanning probe technology, with its inherent two-dimensionality, offers unique capabilities for the measurement of electrical properties on a nanoscale. We have developed a setup which uses scanning capacitance microscopy (SCM) to obtain electrical information of cross-sectioned samples while simul... | Oxide capacitance; Dopant profile; Scanning capacitance microscopy | 1996-01 |