1 - 25 of 3
| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 |
Stringfellow, Gerald B. | Correlation between surface structure and ordering in GaInP | Ga and In atoms in Ga0.52In0.48P layers spontaneously segregate to form alternating In- and Ga-rich {111} monolayers during organometallic vapor phase epitaxial (OMVPE) growth on (001) oriented GaAs substrates, thus forming the CuPt ordered structure. This ordering phenomenon is believed to be drive... | Transformations; Absorbtion spectra; Surface Properties | 1996 |
| 2 |
 |
Stringfellow, Gerald B. | Solid phase immiscibility in GaInN | The large difference in interatomic spacing between GaN and InN is found to give rise to a solid phase miscibility gap. The temperature dependence of the binodal and spinodal lines in the Ga1xInxN system was calculated using a modified valence-force-field model where the lattice is allowed to relax ... | Interatomic spacing; Valence-force field; epitaxial growth | 1996 |
| 3 |
 |
Stringfellow, Gerald B. | Surface photoabsorption study of the effect of V/III ratio on ordering in GaInP | Cu-Pt ordering is widely observed in Ga0.5In0.5P layers grown by organometallic vapor phase epitaxy. The degree of order is a strong function of the input partial pressure of the phosphorus precursor, i.e., the V/III ratio, during growth. By observing the surface structure using in situ surface p... | Degree of order; Photoluminescence; Transmission electron microscopy | 1996 |
1 - 25 of 3