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Liu, Feng | Electronic and elastic properties of edge dislocations in Si | Ab initio, tight-binding, and classical calculations have been done for (a/2)( 110) edge dislocation dipoles in Si at separations of 7.5-22.9 A in unit cells comprising 32-288 atoms. These calculations show states associated with the cores relatively deep in the band gap (~ 0.2 eV) despite the abse... | Edge dislocations | 1995-06 |
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