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| Creator | Title | Description | Subject | Date | ||
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Stringfellow, Gerald B. | Dislocations in GaAs17-xPx | Dislocations, their origins, and their effects on photoluminescence efficiency have been studied in GaAs1-xPx single crystals grown by vapor phase epitaxy. Dislocations were observed using etch pit, optical-transmission microscopy, and x-ray topography techniques. Two types of dislocations are grown... | Photoluminescence efficiency; Growth mechanism; Optical transmission microscopy | 1969 |
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