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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
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Stringfellow, Gerald B.; Shurtleff, James Kevin | Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy | The effect of the isoelectronic surfactant Bi on surface structure and ordering has been studied for GaInP semiconductor alloys grown by organometallic vapor-phase epitaxy. A small amount of Bi trimethylbismuth added during growth is found to result in disordering for layers grown using conditions t... | Surfactant; Semiconductors; Trimethylbismuth | 2000 |
| 2 |
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Stringfellow, Gerald B. | Surfactant controlled growth of GaInP by organometallic vapor phase epitaxy | The effect of the surfactant Sb has been studied for GaInP semiconductor alloys grown by organometallic vapor phase epitaxy. Dramatic changes in the optical and electrical properties of GaInP with CuPt ordering have been observed. A small concentration of triethylantimony TESb in the vapor is fou... | Semiconductors; Surface active agents | 2000 |
| 3 |
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Stringfellow, Gerald B.; Shurtleff, James Kevin | Surfactant effects on doping of GaAs grown by organometallic vapor phase epitaxy | Recently, the addition of the isoelectronic surfactant Sb during organometallic vapor phase epitaxy (OMVPE) of GaInP was shown to eliminate ordering, resulting in a significant change in the band gap energy. These results suggest that surfactants added during growth could have profound affects on ot... | Gallium arsenide; Surfactants; Semiconductors | 2001 |
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