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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
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Stringfellow, Gerald B. | Deep electron traps in organometallic vapor phase grown AlGaAs | Deep electron traps have been studied by means of deep level transient spectrosocopy in type nominally undoped and interntionally te doped Al Ga As epitaxial layers which were grown by vapor phase epitaxy from organometallic compounds (OMVPE). Three main deep electron levels are present in undoped m... | Vapor phase epitaxy; Shallow impurity identity; Optoelectronic device performance | 1980 |
| 2 |
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Stringfellow, Gerald B. | Electron mobility in compensated GaAs and AlGaAs | The dependence of electron mobility on temperature in GaAs and Al Ga As indicates that for cimpensated material a term having causes a significant reduction in the mobility measured at high temperatures. The magnitude of the term in mobility, denoted is found to be linearly proportional to the compe... | Unspecified mobility; Reduced mobility; Space charge regions | 1980 |
| 3 |
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Stringfellow, Gerald B. | Photoluminescence of Shallow Acceptors in Epitaxial AlGaAs | The low-temperature (2 K) photoluminescence (PL) of AlxGa1-xAs (0<x<0.25 was studied in an effort to characterize shallow acceptors in material grown by organometallic vapor phase epitaxy and liquid phase epitaxy techniques. The dominant shallow acceptor in nominally undoped AlxGa1-xAs specimens gro... | Photoluminescence; Acceptors; Doping | 1980 |
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