1 - 25 of 3
| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 |
Stringfellow, Gerald B.; Shurtleff, James Kevin | Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy | The effect of the isoelectronic surfactant Bi on surface structure and ordering has been studied for GaInP semiconductor alloys grown by organometallic vapor-phase epitaxy. A small amount of Bi trimethylbismuth added during growth is found to result in disordering for layers grown using conditions t... | Surfactant; Semiconductors; Trimethylbismuth | 2000 |
| 2 |
 |
Miller, Jan D. | Surfactant adsorption density calculation from Fourier transform infrared external reflection spectroscopy (FTIR/ERS) | An equation to calculate surfactant adsorption density from Fourier transform infrared external reflection spectra was established. The derivation and limitation of this equation are discussed in detail. The validation of the FTIR/ERS adsorption density equation was experimentally verified from t... | Surfactant; Adsorption density; Solid film | 2003 |
| 3 |
 |
Stringfellow, Gerald B.; Shurtleff, James Kevin | Use of surfactant Sb to induce triple period ordering in GaInP | A surfactant is used to induce an ordered structure in an epitaxial layer. The addition of small amounts of triethylantimony during the organometallic vapor phase epitaxy growth of GaInP on 001 GaAs substrates is shown to remove CuPt ordering with a resultant increase in band gap energy. Increasi... | Organometallic; Thermodynamics; Surfactant | 2000-03-13 |
1 - 25 of 3