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Williams, Clayton C.; Huang, Yufeng | Quantitative two-dimensional dopant profile measurement and inverse modeling by scanning capacitance microscopy | Quantitative dopant profile measurements are performed on a nanometer scale by scanning capacitance microscopy (SCM). An atomic force microscope is used to position a nanometer scale tip at a semiconductor surface, and local capacitance change is measured as a function of sample bias. A new feedback... | Dopant profile; Capacitance change; Scanning capacitance microscopy; Feedback control | 1995 |
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