Filters: Date: "1994" Department: "Materials Science & Engineering" Format: "application/pdf" Collection: "ir_uspace" Type: "Text"
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| Creator | Title | Description | Subject | Date | ||
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Stringfellow, Gerald B. | Control of ordering in Ga0.5In0.5P using growth temperature | The kinetic processes leading to ordering in Gas,, In o.4P8 have been studied by observing the effects of substrate misorientation (O-9), growth rate (0.1-0.5), and substrate temperature (570- 670 "C) during growth. The ordered structure and degree of ordering are determined using transmission elec... | Ordering Structure; Growth Temprature; Growth Rate | 1994 |
| 2 |
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Stringfellow, Gerald B. | Effects of substrate misorientation and growth rate on ordering in GaInP | Epitaxial layers of Ga,Tn,_,P with 1=0.52 have been grown by-organometallic vapor-phase apitaxy on GaAs substrates misoriented from the (001) plane in the [ 1 IO] direction by angles 6,) of O", 3", 6", and 9". For each substrate orientation growth rates rg of 1, 2, and 4 pm/h have been used. The ... | Transmission electron diffraction; Dark-field imaging; Photoluminescence | 1994 |
| 3 |
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Stringfellow, Gerald B. | InAsSbBi alloys grown by organometallic vapor-phase epitaxy | Provides information on a study on the growth of InAsSbBi alloys by organometallic vapor-phase epitaxy. Experiment; Results and discussion; Conclusion. | Alloys; Epitaxy; Organometallic Compounds | 1994 |
| 4 |
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Stringfellow, Gerald B. | Kinetically controlled order/disorder structure in GaInP | A Ga0.52In0.58p order/disorder heterostructure having a band-gap energy difference exceeding 160 meV has been grown by organometallic vapor phase epitaxy. The two layers were grown on a nominally (OOl)-oriented GaAs substrate misoriented by 3° toward the [110] direction in the lattice. The disorder... | Indium phosphides; Gallium Phosphides; Heterojunctions | 1994 |
| 5 |
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Stringfellow, Gerald B.; Sadwick, Laurence P. | Low pressure pyrolysis of alternate phosphorus precursors for chemical beam epitaxial growth of InP and related compounds | The most widely used phosphorous source in chemical beam epitaxy (CBE) is phosphine (PH3). However, because it is highly toxic, alternatives to phosphine have been sought for the growth of phosphorous-containing compounds. We have investigated the pyrolysis rates and reaction products, in low pres... | Chemical Beam Epitaxy; CBE | 1994 |
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