UScholar Works
 
Filters: Department: "Materials Science & Engineering" Collection: "ir_uspace" Subject: "Silicon"
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1 Liu, FengConfining P diffusion in Si by an As-doped barrier layerThe miniaturization of Si-based devices requires control of doping profile, which makes the understanding of dopant interaction and diffusion in Si critical. The authors have studied the effect of As doping on P diffusion in Si using first-principles calculations. The authors found a form of As-vaca...P diffusion; Silicon; Arsenic doping; As-doped barrier; Diffusion control2007
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