Filters: Department: "Materials Science & Engineering" School Or College: "College of Engineering" Collection: "ir_uspace" Subject: "Silicon"
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Liu, Feng | Confining P diffusion in Si by an As-doped barrier layer | The miniaturization of Si-based devices requires control of doping profile, which makes the understanding of dopant interaction and diffusion in Si critical. The authors have studied the effect of As doping on P diffusion in Si using first-principles calculations. The authors found a form of As-vaca... | P diffusion; Silicon; Arsenic doping; As-doped barrier; Diffusion control | 2007 |
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