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Filters: Collection: "ir_uspace" Subject: "Alloys"
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CreatorTitleDescriptionSubjectDate
1 Stringfellow, Gerald B.Electron mobility in AlxGa1-xAshe electron mobility in AlxGa1-xAs grown by several techniques has been studied to determine whether VPE layers are more highly compensated than comparable LPE layers. The techniques used to grow layers included (1) organometallic VPE using Al(CH3)3, AsH3, and Ga(C2H5)3 or Ga(CH3)3, (2) ''hybrid'' o...Alloys; Organometallics1979-06
2 Stringfellow, Gerald B.GaInAsSb metastable alloys grown by organometallic vapor phase epitaxyGa1-xlnx As1-ySby alloys have been grown by organometallic vapor phase epitaxy using trimethyl compounds of Ga, In, As, and Sb(TMGa, TMIn, TMAs, and TMSb) plus AsH3 in an atmospheric pressure, horizontal, infrared heated reactor. For the first time, alloys near the center of the region of solid immi...Organometallic; Alloys; Vapor phase epitaxy1986
3 Stringfellow, Gerald B.; Shurtleff, James KevinHeterostructures in GaInP grown using a change in Te dopingIn organometallic vapor phase epitaxy, changes in growth conditions can be used to modulate the extent of CuPt ordering and, hence, the band gap energy of GaInP. One method is to add Te during growth. An increase in the band gap energy of 0.1 eV due to a decrease in ordering has been obtained by ...Heterostructures; Alloys2000
4 Stringfellow, Gerald B.Heterostructures in GaInP grown using a change in V/III ratioA natural monolayer 111% superlattice -- the CuPt ordered structure -- is formed spontaneously during organometallic vapor phase epitaxial OMVPE growth of Ga0.52In0.48P. The extent of this ordering process is found to be a strong function of the input partial pressure of the phosphorus precursor dur...Superlattices; Alloys; Atomic ordering; Heterostructures1997-02-24
5 Stringfellow, Gerald B.InAsSbBi alloys grown by organometallic vapor-phase epitaxyProvides information on a study on the growth of InAsSbBi alloys by organometallic vapor-phase epitaxy. Experiment; Results and discussion; Conclusion.Alloys; Epitaxy; Organometallic Compounds1994
6 Stringfellow, Gerald B.Organometallic vapor phase epitaxial growth of AlGaInPAlx Ga,, In, _ x _ y P with x + y = 0.51, lattice matched to the GaAs substrate, has been grown by organometaUic vapor phase epitaxy. The simple, horizontal, IR heated system operates at atmospheric pressure using the reactants TMA1, TMGa, TMln, PH3, and K2. Alloys giving room temperature, band edge...Liquid phase epitaxial growth; LPE; Alloys; Surface morphology1985
7 Stringfellow, Gerald B.Use of Nitrogen to disorder GaInPSignificant changes in microstructure, surface structure, and alloy composition have been observed in GaInP with the addition of nitrogen. These effects occur due to surface changes induced by small concentrations of nitrogen. Transmission electron microscopy and photoluminescence experiments indica...Nitrogen; Alloys; Transmission2004
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