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Williams, Clayton C. | Direct imaging of SiO2 thickness variation on Si using modified atomic force microscope | Fabrication techniques of metal-oxide-semiconductor ~(MOS) transistors have been improved very rapidly during the last several decades. With this trend, scaling down of MOS transistors is necessary to improve the speed of circuits and the packing density of discrete devices. Both lateral and vertic... | Silicon dioxide; Oxide layer; Phosphorus ions; Oxide capacitance; Dopant profile | 1996-03-01 |
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