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CreatorTitleDescriptionSubjectDate
1 Scarpulla, MichaelFabrication of GaNxAs1-x quantum structures by focused ion beam patterningA novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaNxAs1-x film by amorphization through ion implantation followed by regrowth upon r...Gallium arsenide; Quantum dots; Quantum wires; Thermal annealing2005
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