| Publication Type |
pre-print |
| School or College |
College of Engineering |
| Department |
Materials Science & Engineering |
| Creator |
Scarpulla, Michael |
| Other Author |
Kosyak, V.; Karmarkar, M. A. |
| Title |
Temperature dependent conductivity of polycrystalline Cu 2ZnSnS 4 thin films |
| Date |
2012-01-01 |
| Description |
The temperature-dependent conductivity of Cu2ZnSnS4 (CZTS) thin films prepared by sulfurization of different sputtered ZnS/Cu/Sn stacks and also of the same stack annealed for different times was investigated from 30-300 K. Fitting of the through-thickness conductivity requires a model including Mott variable-range hopping (M-VRH), nearest-neighbor hopping (NNH), and thermionic emission over grain boundary (GB) barriers. The GB barrier height varies sensitively from 50-150 (65) meV with annealing and especially with [Cu]/([Zn]þ[Sn]) ratio but is independent of [Zn]/[Sn] ratio. These results are critical for understanding the behavior of solar cells based on polycrystalline CZTS absorber layers. |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| Volume |
100 |
| Issue |
26 |
| Dissertation Institution |
University of Utah |
| Language |
eng |
| Bibliographic Citation |
Kosyak, V., Karmarkar, M. A., & Scarpulla, M. A. (2012). Temperature dependent conductivity of polycrystalline Cu 2ZnSnS 4 thin films. Applied Physics Letters, 100(26), no. 263903. |
| Rights Management |
(c)American Institute of Physics. The following article appeared in Kosyak, V., Karmarkar, M. A., & Scarpulla, M. A. Applied Physics Letters, 100(26), 2012. and may be found at http://dx.doi.org/10.1063/1.4731875. |
| Format Medium |
application/pdf |
| Format Extent |
517,835 bytes |
| Identifier |
uspace,17651 |
| ARK |
ark:/87278/s6vt29v7 |
| Setname |
ir_uspace |
| ID |
708067 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6vt29v7 |
