Publication Type |
Journal Article |
School or College |
College of Science |
Department |
Physics |
Creator |
Boehme, Christoph |
Other Author |
Lips, Klaus |
Title |
Time domain measurement of spin-dependent recombination |
Date |
2001 |
Description |
A defect characterization method is presented, the time domain measurement of spin-dependent recombination (TSR). Recombination between paramagnetic states is changed rapidly by electron spin resonant excitation through strong nanosecond microwave pulses. After the pulse, a slow relaxation of the recombination rate towards its steady state takes place. By measuring the current transient after the resonant pulse, information about dissociation and recombination probabilities of spin pairs is directly obtained for a distinct recombination path. Dangling bond recombination in microcrystalline silicon was used as model process for the demonstration of TSR. |
Type |
Text |
Publisher |
American Institute of Physics (AIP) |
Journal Title |
Applied Physics Letters |
Volume |
79 |
Issue |
26 |
First Page |
4363 |
Last Page |
4365 |
DOI |
10.1063/1.1428623 |
citatation_issn |
36951 |
Subject |
Spin-dependent recombination |
Subject LCSH |
Ion recombination; Time-domain analysis; Semiconductors -- Recombination; Electronic excitation; Semiconductors -- Defects; Silicon -- Defects |
Language |
eng |
Bibliographic Citation |
Boehme, C., & Lips, K. (2001). Time domain measurement of spin-dependent recombination. Applied Physics Letters, 79(26), 4363-5. |
Rights Management |
(c)American Institute of Physics. The following article appeared in Boehme, C., & Lips, K., Applied Physics Letters, 79(26), 2001 and may be found at http://dx.doi.org/10.1063/1.1428623 |
Format Medium |
application/pdf |
Format Extent |
60,499 bytes |
Identifier |
ir-main,11994 |
ARK |
ark:/87278/s68g94bc |
Setname |
ir_uspace |
ID |
707422 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s68g94bc |