Origin of spectral broadening in amorphous π-conjugated amorphous semiconductors

Update Item Information
Publication Type Journal Article
School or College College of Science
Department Physics
Creator Lupton, John Mark
Other Author Samuel, I. D. W.; Burn, P. L.
Title Origin of spectral broadening in amorphous π-conjugated amorphous semiconductors
Date 2002-10
Description We present a study of the picosecond fluorescence dynamics of p-conjugated semiconducting organic dendrimers in the solid state. By varying the degree of branching within the dendrons, referred to as the dendrimer generation, a control of intermolecular spacing of the emissive core and therefore of the lattice parameter for Forster-type energy transfer is achieved. This allows a distinction between spectral diffusion and excimer formation as the two main sources of spectral broadening in organic semiconductors. Whereas Forstertype dispersive spectral relaxation is independent of temperature but strongly dependent on the interchromophore distance, excimer formation is also strongly thermally activated due to temperature-dependent conformational changes and the influence of thermally activated dynamic disorder. The rapid spectral diffusion allows a determination of the excimer rise in the emission, which is shown to have a profound impact on the steady state luminescence properties of dendrimer films. We show that the dendrimer generation not only allows a microscopic control of intermolecular interactions but also a direct control of the rate of spectral diffusion. Implications for the design of novel materials for optoelectronic devices are discussed.
Type Text
Publisher American Physical Society
Journal Title Physical Review B
Volume 66
Issue 15
DOI 10.1103/PhysRevB.66.155206
citatation_issn 0163-1829
Subject pi-conjugated polymers; pi-conjugated semiconductors; Spectral broadening; Solid state; Picosecond fluorescence dynamics
Subject LCSH Amorphous semiconductors -- Optical properties; Dendrimers; Dendrimers -- Optical properties
Language eng
Bibliographic Citation Lupton, J. M., Samuel, I. D. W., & Burn, P. L. (2002). Origin of spectral broadening in amorphous π-conjugated amorphous semiconductors. Physical Review B, 66(15), 155206.
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevB.66.155206
Format Medium application/pdf
Format Extent 88,305 bytes
Identifier ir-main,11896
ARK ark:/87278/s6v12phc
Setname ir_uspace
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Reference URL https://collections.lib.utah.edu/ark:/87278/s6v12phc
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