Fast nuclear spin hyperpolarization of phosphorus in silicon

Update Item Information
Publication Type Journal Article
School or College College of Science
Department Physics
Creator Boehme, Christoph
Other Author McCamey, D. R.; van Tol, J.; Morley, G. W.
Title Fast nuclear spin hyperpolarization of phosphorus in silicon
Date 2009-01
Description We experimentally demonstrate a method for obtaining nuclear spin hyperpolarization, that is, polarization significantly in excess of that expected at thermal equilibrium. By exploiting a nonequilibrium Overhauser process, driven by white light irradiation, we obtain more than 68% negative nuclear polarization of phosphorus donors in silicon. This polarization is reached with a time constant of ~150 sec, at a temperature of 1.37 K and a magnetic field of 8.5 T. The ability to obtain such large polarizations is discussed with regards to its significance for quantum information processing and magnetic resonance imaging.
Type Text
Publisher American Physical Society
Journal Title Physical Review Letters
Volume 102
Issue 2
First Page 027601-1
Last Page 027601-4
DOI 10.1103/PhysRevLett.102.027601
citatation_issn 0031-9007
Subject Hyperpolarization; Spin coherence; Electrical readout
Subject LCSH Nuclear spin; Amorphous silicon; Phosphorus; Magnetic resonance
Language eng
Bibliographic Citation McCamey, D. R., van Tol, J., Morley, G. W., & Boehme, C. (2009). Fast nuclear spin hyperpolarization of phosphorus in silicon. Physical Review Letters, 102(2), 027601-1-027601-4.
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.102.027601
Format Medium application/pdf
Format Extent 472,979 bytes
Identifier ir-main,11953
ARK ark:/87278/s6m04q26
Setname ir_uspace
ID 707020
Reference URL https://collections.lib.utah.edu/ark:/87278/s6m04q26
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