Magnetocrystalline anisotropy and magnetization reversal in Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting

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Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Scarpulla, Michael
Other Author Bihler, C.; Kraus, M.; Huebl, H.; Brandt, M. S.; Goennenwein, S. T. B.; Opel, M.; Stone, P. R.; Farshchi, R.; Dubon, O. D.
Title Magnetocrystalline anisotropy and magnetization reversal in Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting
Date 2007-06
Description We report the observation of ferromagnetic resonance (FMR) and the determination of the magnetocrystalline anisotropy in (100)-oriented single-crystalline thin film samples of Ga1−xMnxP with x=0.042. The contributions to the magnetic anisotropy were determined by measuring the angular and the temperature dependencies of the FMR resonance fields and by superconducting quantum interference device magnetometry. The largest contribution to the anisotropy is a uniaxial component perpendicular to the film plane; however, a negative contribution from cubic anisotropy is also found. Additional in-plane uniaxial components are observed at low temperatures, which lift the degeneracy between the in-plane [011] and [011¯] directions as well as between the in-plane [010] and [001] directions. Near T=5 K, the easy magnetization axis is close to the in-plane [011¯] direction. All anisotropy parameters decrease with increasing temperature and disappear above the Curie temperature TC. A consistent picture of the magnetic anisotropy of ferromagnetic Ga1−xMnxP emerges from the FMR and magnetometry data. The latter can be successfully modeled when both coherent magnetization rotation and magnetic domain nucleation are considered.
Type Text
Publisher American Physical Society
Journal Title Physical Review B
Volume 75
Issue 21
DOI 10.1103/PhysRevB.75.214419
citatation_issn 1098-0121
Subject Magnetocrystalline anisotropy; GaMnAs; Gallium arsenide
Subject LCSH Semiconductors -- Magnetic properties; Ferromagnetic resonance; Thin films; Semiconductor doping; Ion implantation; Anisotropy; Epitaxy
Language eng
Bibliographic Citation Bihler, C., Kraus, M., Huebl, H., Brandt, M. S., Goennenwein, S. T. B., Opel, M., Scarpulla, M., Stone, P. R., Farshchi, R., & Dubon, O. D. (2007). Magnetocrystalline anisotropy and magnetization reversal in Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting. Physical Review B, 75(21), 214419.
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevB.75.214419
Format Medium application/pdf
Format Extent 311,971 bytes
Identifier ir-main,12257
ARK ark:/87278/s6g73zcx
Setname ir_uspace
Date Created 2012-06-13
Date Modified 2021-05-06
ID 706815
Reference URL https://collections.lib.utah.edu/ark:/87278/s6g73zcx
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