Publication Type |
Journal Article |
School or College |
College of Science |
Department |
Physics |
Creator |
Williams, Clayton C. |
Other Author |
Bussmann, E.; Zheng, N. |
Title |
Single-electron manipulation to and from a SiO2 surface by electrostatic force microscopy |
Date |
2005 |
Description |
Occupation of individual electron states near the surface of a SiO2 film is controlled by reversible single-electron tunneling to or from a metallic electrostatic force microscope probe. By switching the polarity of an applied dc bias between the probe and the sample to adjust the Fermi energy of the probe with respect to states near the dielectric surface, individual electrons are repeatably manipulated in and out of the sample. The single-electron charging and discharging is detected by frequency detection electrostatic force microscopy. |
Type |
Text |
Publisher |
American Institute of Physics (AIP) |
Journal Title |
Applied Physics Letters |
Volume |
86 |
Issue |
16 |
First Page |
163109 |
Last Page |
163101 |
DOI |
10.1063/1.1897429 |
citatation_issn |
36951 |
Language |
eng |
Bibliographic Citation |
Bussmann, E., Zheng, N., & Williams, C. C. (2005). Single-electron manipulation to and from a SiO2 surface by electrostatic force microscopy. Applied Physics Letters, 86(16), Apr., 163109-1-3. |
Rights Management |
(c)American Institute of Physics. The following article by Bussmann, E., Zheng, N., & Williams, C. C. appeared in Journal of Applied Physics Letters, 86(16), 2005 and may be found at htt://www.DOI: 10.1063/1.1897429. |
Format Medium |
application/pdf |
Format Extent |
230,741 bytes |
Identifier |
ir-main,5146 |
ARK |
ark:/87278/s6zc8mdv |
Setname |
ir_uspace |
ID |
706021 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6zc8mdv |