Publication Type |
Journal Article |
School or College |
College of Engineering |
Department |
Materials Science & Engineering |
Creator |
Liu, Feng |
Other Author |
Huang, Bing; Yan, Qimin; Zhou, Gang; Wu, Jian; Gu, Bing-Lin; Duan, Wenhui |
Title |
Making a field effect transistor on a single graphene nanoribbon by selective doping |
Date |
2007 |
Description |
Using first-principles electronic structure calculations, we show a metal-semiconductor transition of a metallic graphene nanoribbon with zigzag edges induced by substitutional doping of nitrogen or boron atoms at the edges. A field effect transistor consisting of a metal-semiconductor-metal junction can then be constructed by selective doping of the ribbon edges. The current-voltage characteristics of such a prototype device is determined by the first-principles quantum transport calculations. |
Type |
Text |
Publisher |
American Institute of Physics (AIP) |
Journal Title |
Applied Physics Letters |
Volume |
91 |
Issue |
25 |
First Page |
253122 |
DOI |
10.1063/1.2826547 |
citatation_issn |
36951 |
Subject |
Graphene nanoribbon; Selective doping |
Subject LCSH |
Field-effect transistors; Semiconductor doping |
Language |
eng |
Bibliographic Citation |
Huang, B., Yan, Q., Zhou, G., Wu, J., Gu, B.-L., Duan, W., & Liu F. (2007). Making a field effect transistor on a single graphene nanoribbon by selective doping. Applied Physics Letters, 91(25), 253122. |
Rights Management |
(c)American Institute of Physics. The following article appeared in Huang, B., Yan, Q., Zhou, G., Wu, J., Gu, B.-L., Duan, W., & Liu F., Applied Physics Letters, 91(25), 2007 and may be found at http://dx.doi.org/10.1063/1.2826547 |
Format Medium |
application/pdf |
Format Extent |
391,292 bytes |
Identifier |
ir-main,12123 |
ARK |
ark:/87278/s67s865c |
Setname |
ir_uspace |
ID |
705075 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s67s865c |