Stress-induced tuning of metal-insulator transition in NdNiO3 films

We have used the lattice-mismatch epitaxial strain, induced by the constraint of epitaxy, to tune the metal-insulator (M- I) transition temperature of NdNiO3 films grown on Si(100) substrate. Films were integrated with the Si(100) substrate using several combinations of thin buffer layers. A systematic variation in the electrical transport properties has been observed with the change in the lattice mismatch between NdNiO3 and the buffer layer just below it. It was shown that by the proper selection of the substrate and thickness of film, it is possible to control and precisely tune the M- I transition temperature of NdNiO3 to any desired value between 12 and 300 K (temperature range of this study). Fine control over the M- I transition temperature of these films is likely to boost the potential of these films for their applications in bolometers, actuators, and thermal/optical switches in next-generation perovskite-based microelectronic devices.