| Publication Type |
Journal Article |
| School or College |
College of Science |
| Department |
Physics |
| Creator |
Vardeny, Zeev Valentine |
| Other Author |
O'Connor, P.; Ray, S.; Tauc, J. |
| Title |
Optical studies of excess carrier recombination in α-Si:H: evidence of dispersive diffusion |
| Date |
1980-05 |
| Description |
Relaxation of photoinduced optical absorption following pulsed laser excitation was measured between 0.5 pis and 10 ms in doped and undoped a-Si:H as a function of temperature. The recombination was found to be bimolecular diffusion limited. The diffusion coefficient of the excess carriers is time dependent (~t-°3 ) in agreement with the drift mobility of photocarriers and the predictions of the continuous-time random-walk theory of dispersive transport in disordered materials. |
| Type |
Text |
| Publisher |
American Physical Society |
| Journal Title |
Physical Review Letters |
| Volume |
44 |
| Issue |
19 |
| First Page |
1267 |
| Last Page |
1271 |
| DOI |
10.1103/PhysRevLett.44.1267 |
| citatation_issn |
0031-9007 |
| Subject |
Hydrogenated amorphous silicon; a-Si:H; Excess carrier recombination; Dispersive diffusion |
| Subject LCSH |
Amorphous semiconductors -- Optical properties; Excess carriers (Solid state physics) |
| Language |
eng |
| Bibliographic Citation |
Vardeny, Z., OConnor, P., Ray, S., & Tauc, J. (1980). Optical studies of excess carrier recombination in α-Si:H: evidence of dispersive diffusion. Physical Review Letters, 44(19), May, 1267-71. |
| Rights Management |
(c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.44.1267 |
| Format Medium |
application/pdf |
| Format Extent |
570,980 bytes |
| Identifier |
ir-main,9553 |
| ARK |
ark:/87278/s61n8jg9 |
| Setname |
ir_uspace |
| ID |
704977 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s61n8jg9 |
