| Publication Type |
Journal Article |
| School or College |
College of Science |
| Department |
Physics |
| Creator |
Symko, Orest George |
| Other Author |
Klein, T. |
| Title |
Formation of AlCuFe quasicrystalline thin films by solid state diffusion |
| Date |
1994 |
| Description |
We show that thin films 3000 A in thickness of the icosahedral AlCuFe phase can be formed by solid state diffusion of sputtered Al, Cu, and Fe layers. As for bulk materials, we propose that the icosahedral phase grows by diffusion of the 0.1 in the A13Fe layer previously formed by interdiffusion of the Al and Fe layers. These films present high resistivity values comparable to those obtained in bulk samples of high structural quality. |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| Journal Title |
Applied Physics Letters |
| Volume |
64 |
| Issue |
4 |
| First Page |
431 |
| Last Page |
433 |
| DOI |
10.1063/1.111944 |
| citatation_issn |
36951 |
| Subject |
AlCuFe; Quasicrystalline thin films; Solid state diffusion; Icosahedral phase |
| Subject LCSH |
Thin films; Quasicrystals |
| Language |
eng |
| Bibliographic Citation |
Klein, T., & Symko, O. G. (1994). Formation of AlCuFe quasicrystalline thin films by solid state diffusion. Applied Physics Letters, 64(4), 431-3. |
| Rights Management |
(c)American Institute of Physics. The following article appeared in Klein, T., & Symko, O. G., Applied Physics Letters, 64(4) 1994 and may be found at http://dx.doi.org/10.1063/1.111944 |
| Format Medium |
application/pdf |
| Format Extent |
390,174 bytes |
| Identifier |
ir-main,11114 |
| ARK |
ark:/87278/s6pk10g7 |
| Setname |
ir_uspace |
| ID |
704556 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6pk10g7 |
