Kinetically controlled order/disorder structure in GaInP

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Publication Type Journal Article
School or College College of Engineering
Department Electrical & Computer Engineering; Materials Science & Engineering
Creator Stringfellow, Gerald B.
Other Author Su, L.C.; Ho, I.H.
Title Kinetically controlled order/disorder structure in GaInP
Date 1994
Description A Ga0.52In0.58p order/disorder heterostructure having a band-gap energy difference exceeding 160 meV has been grown by organometallic vapor phase epitaxy. The two layers were grown on a nominally (OOl)-oriented GaAs substrate misoriented by 3° toward the [110] direction in the lattice. The disordered layer was grown first, at a temperature of 740 °C. The temperature was then reduced to 620 °C for the growth of the second, highly ordered, layer. X-ray diffraction shows that the two layers have the same composition and are both lattice matched to the GaAs substrate. Transmission electron diffraction patterns indicate that the first layer is completely disordered and that the second layer is highly ordered with only one variant. A low density of antiphase boundaries is observed in the dark field transmission electron microscope image of the top (ordered) layer. High resolution images demonstrate that the interface is abrupt with no dislocations or other defects. Photoluminescence measured at 10 K shows two sharp and distinct peaks at 1.998 and 1.835 eV for high excitation intensities. The peak separation is even larger at lower excitation intensities. The two peaks come from the disordered and ordered materials, respectively. The peak separation represents the largest energy difference between ordered and disordered material reported to date. This large energy difference, much larger than kT at room temperature, may make such heterostructures useful for photonic devices such as light emitting diodes and lasers.
Type Text
Publisher American Institute of Physics (AIP)
Volume 65
Issue 6
First Page 749
Last Page 751
Subject Indium phosphides; Gallium Phosphides; Heterojunctions
Subject LCSH Epitaxy; Metal organic chemical vapor deposition; Superlattices as materials
Dissertation Institution University of Utah
Language eng
Bibliographic Citation Su, L. C., Ho, I. H., & Stringfellow, G. B. (1994). "Kinetically controlled order/disorder structure in GaInP." Applied Physics Letters, 65(6), 749-51.
Rights Management (c)American Institute of Physics. The following article appeared in Su, L.C., Ho, I.H., & Stringfellow, G.B., Applied Physics Letters. 65, 1994.
Format Medium application/pdf
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Identifier ir-main,561
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Date Created 2012-06-13
Date Modified 2021-05-06
ID 704317
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