| Publication Type |
Journal Article |
| School or College |
College of Science |
| Department |
Physics |
| Creator |
Vardeny, Zeev Valentine |
| Other Author |
Strait, J.; Tauc, J. |
| Title |
Picosecond trapping of photocarriers in amorphous silicon |
| Date |
1983 |
| Description |
Trapping of photoexcited carriers in the picosecond and subnanosecond time domains was studied by measuring the decay of photoinduced absorption (PA) in a-Si, a-Si:F, a-Si:H, and a-Si:H:F. We found that when the midgap density of states decreases, both the trapping time and its temperature dependence increase. The observed PA decays are compared to the picosecond photoconductivity decays, and the differences in the response curves are explained. The possibility that geminate recombination might explain our results is ruled out. |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| Volume |
42 |
| Issue |
7 |
| First Page |
580 |
| Last Page |
582 |
| DOI |
10.1063/1.94008 |
| Subject |
Photocarriers; Amorphous silicon; Picosecond trapping; Photoinduced absorption |
| Subject LCSH |
Picosecond pulses; Amorphous semiconductors |
| Language |
eng |
| Bibliographic Citation |
Vardeny, Z, Strait, J., & Tauc, J. (1983). Picosecond trapping of photocarriers in amorphous silicon. Applied Physics Letters, 42(7), 580-2. |
| Rights Management |
©American Institute of Physics. The following article appeared in Vardeny, Z, Strait, J., & Tauc, J., Applied Physics Letters, 42(7), 1983 and may be found at http://dx.doi.org/10.1063/1.94008 |
| Format Medium |
application/pdf |
| Format Extent |
325,774 bytes |
| Identifier |
ir-main,9567 |
| ARK |
ark:/87278/s60k2svv |
| Setname |
ir_uspace |
| ID |
704251 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s60k2svv |
