| Publication Type |
Journal Article |
| School or College |
College of Science |
| Department |
Physics |
| Creator |
Williams, Clayton C. |
| Other Author |
Domansky, K.; Leng, Y.; Janata, J.; Petelenz, D. |
| Title |
Mapping of mobile charges on insulator surfaces with the electrostatic force microscope |
| Date |
1993 |
| Description |
Migration of surface ions in lateral fields on insulator surfaces may modify the electrical characteristics of underlying semiconductor structures causing device instabilities. A high sensitivity electrostatic force microscope is used to image the movement and spatial distribution of surface ions on Si3N4. Mobile surface ions are distributed by the fringing fields of a p-n junction and an open-gate field-effect transistor. The surface charge distribution and topography are imaged simultaneously on a micrometer scale. |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| Journal Title |
Applied Physics Letters |
| Volume |
63 |
| Issue |
11 |
| First Page |
1513 |
| Last Page |
1515 |
| DOI |
10.1063/1.110759 |
| citatation_issn |
36951 |
| Subject |
Insulator surfaces; Surface ions; Electrostatic force microscope |
| Subject LCSH |
Metal-insulator transitions; Field-effect transistors |
| Language |
eng |
| Bibliographic Citation |
Domansky, K., Leng, Y., Williams, C. C., Janata, J., & Petelenz, D. (1993). Mapping of mobile charges on insulator surfaces with the electrostatic force microscope. Applied Physics Letters, 63(11), Sept., 1513-5. |
| Rights Management |
(c)American Institute of Physics. The following article appeared in Domansky, K., Leng, Y., Williams, C. C., Janata, J., & Petelenz, D., Applied Physics Letters, 63(11), 1993 and may be found at http://dx.doi.org/10.1063/1.110759 |
| Format Medium |
application/pdf |
| Format Extent |
476,290 bytes |
| Identifier |
ir-main,8577 |
| ARK |
ark:/87278/s6sb4q1r |
| Setname |
ir_uspace |
| ID |
703978 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6sb4q1r |
