Publication Type |
Journal Article |
School or College |
College of Engineering |
Department |
Materials Science & Engineering |
Creator |
Liu, Feng |
Other Author |
Qin, X. R.; Swartzentruber, B. S.; Lagally, M. G. |
Title |
Modification of Si(001) substrate bonding by adsorbed Ge or Si dimer islands |
Date |
1998-09 |
Description |
High-resolution scanning tunneling microscopy studies of the Si(100)-(2 X 1) surface show a heretofore unrecognized distortion of the substrate structure when islands form during the initial stage of growth of either Si or Ge. The distortion, reflecting the influence of strain, extends at least three dimers away from the adsorption sites. We present a realistic structural model. |
Type |
Text |
Publisher |
American Physical Society |
Journal Title |
Physical Review Letters |
Volume |
81 |
Issue |
11 |
First Page |
2288 |
Last Page |
2291 |
DOI |
10.1103/PhysRevLett.81.2288 |
citatation_issn |
0031-9007 |
Subject |
Si(001); Adsorbed Ge; Adsorbed Si; Dimer islands; Substrate bonding; Distortion |
Subject LCSH |
Surface chemistry |
Language |
eng |
Bibliographic Citation |
Qin, X. R., Liu, F., Swartzentruber, B. S., & Lagally, M. G. (1998). Modification of Si(001) substrate bonding by adsorbed Ge or Si dimer islands. Physical Review Letters, 81(11), 2288-91. |
Rights Management |
(c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.81.2288 |
Format Medium |
application/pdf |
Format Extent |
233,381 bytes |
Identifier |
ir-main,12209 |
ARK |
ark:/87278/s67m0s5n |
Setname |
ir_uspace |
ID |
703959 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s67m0s5n |